High light extraction efficiency nitride based light emitting diode by surface roughening

1. A method for fabricating a III-nitride light emitting diode (LED), comprising:

texturing at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED to form a textured surface, wherein the texturing step is performed by plasma assisted chemical etching and comprises the steps of:

(1) creating at least one feature with at least one sidewall that reflects and transmits at least one light ray incident from inside the feature; and

(2) inclining the sidewall such that each time the ray is reflected, an angle of incidence of the ray relative to a surface normal of the sidewall decreases, such that:

(a) when the angle of incidence of the ray is smaller than a critical angle, the ray's transmission through the sidewall is increased, and

(b) when the angle of incidence of the ray is at least equal to the critical angle, the ray is reflected by the sidewall.

2. The method of claim 1 , wherein the texturing step is performed by photolithography followed by the etching.

3. The method of claim 1 , wherein the textured surface is formed using nano-imprinting followed by the etching.

4. The method of claim 1 , wherein light emitted by an active region of the LED is extracted from the textured surface.

5. A method for emitting light from a III-nitride light emitting diode (LED), comprising:

emitting the light from at least one textured surface of a semipolar or nonpolar plane of a III-nitride layer of the LED, wherein the textured surface comprises:

(1) at least one feature with at least one sidewall that reflects and transmits at least one light ray incident from inside the feature; and

(2) the sidewall inclined such that each time the ray is reflected, an angle of incidence of the ray relative to a surface normal of the sidewall decreases, such that:

(a) when the angle of incidence of the ray is smaller than a critical angle, the ray's transmission through the sidewall is increased, and

(b) when the angle of incidence of the ray is at least equal to the critical angle, the ray is reflected by the sidewall.

6. A III-nitride light emitting diode (LED), comprising:

(a) n-type III-nitride;

(b) p-type III-nitride;

(c) a III-nitride active layer, that emits light, formed between the n-type III-nitride and p-type III-nitride;

(d) a III-nitride light extraction surface on the n-type III-nitride and forming an interface with an external medium, wherein the III-nitride light extraction surface has features with at least one sloped sidewall which transmits the light into external medium air at the interface and reflects the light at the interface, wherein:

(1) the reflected light, after undergoing subsequent reflections inside the features, has an increased incidence angle relative to the interface and consequently an increased chance of being transmitted to the external medium, and

(2) the n-type III-nitride, p-type III-nitride, and III-nitride active layer are semi-polar or non-polar layers.

7. The LED of claim 6 , wherein the external medium is a medium with a smaller refractive index than III-nitride.

8. The LED of claim 6 , wherein the external medium is air or a vacuum.