Method of fabricating polycrystalline silicon thin film for improving crystallization characteristics and method of fabricating liquid crystal display device using the same
A crystallization method of an amorphous semiconductor layer includes providing an amorphous semiconductor layer having a first thickness, crystallizing the amorphous semiconductor layer in a first direction, partially reducing the crystallized semiconductor layer to a second thickness less than the first thickness and crystallizing the etched semiconductor layer in a second direction.
1. A method of fabricating a thin film transistor comprising:
forming an amorphous semiconductor layer over a substrate;
crystallizing the amorphous semiconductor layer in a first direction;
partially etching a surface of the crystallized semiconductor layer;
crystallizing the partially etched semiconductor layer to have grains with a quasi-rectangular shape in a second direction;
forming a gate insulating layer on the semiconductor layer;
forming a gate electrode on the gate insulating layer;
forming an insulating layer on the substrate; and
forming a source electrode and a drain electrode contacting the semiconductor layer.
2. The method according to claim 1 , wherein forming the amorphous semiconductor layer includes:
forming an amorphous semiconductor layer having a first thickness.
3. The method according to claim 1 , wherein each of the source electrode and the drain electrode contacts the semiconductor layer within at least a quasi-rectangular shape of a grain.
4. The method according to claim 1 , wherein partially etching the surface of the crystallized semiconductor layer includes:
partially etching the surface of the crystallized semiconductor layer to a second thickness.
5. The method according to claim 1 , wherein the first direction and the second direction are perpendicular to each other.