Image sensor and method of manufacturing the same
An image sensor and a method of manufacturing the same are disclosed. The image sensor includes a plurality of photodiodes on a substrate, an dielectric layer on the plurality of the photodiodes, a metal line layer in the dielectric layer corresponding to a border region between neighboring photodiodes, the metal line layer having a curved backside, a color filter layer on the dielectric layer, and a microlens on the color filter layer.
1. An image sensor comprising:
a plurality of photodiodes on or in a substrate;
a dielectric layer formed on the plurality of the photodiodes;
a metal line layer in or on the dielectric layer corresponding to a border region between neighboring photodiodes, the metal line layer comprising a side toward the photodiodes having a first curved surface concave to a first direction, a second curved surface concave to a second direction, and an apex where the first and second curved surfaces meet, wherein the first direction is from one of the neighboring photodiodes to the metal line layer, and the second direction is from another one of the neighboring photodiodes to the metal line layer;
a color filter layer on the dielectric layer; and
a microlens on the color filter layer.
2. The image sensor of claim 1 , wherein the first and second curved surfaces are symmetrical with respect to a vertical line passing through the apex.
3. The image sensor of claim 2 , wherein the vertical line passing through the apex is aligned to a border surface between the neighboring photodiodes.
4. The image sensor of claim 1 , wherein the metal line layer is in a location over an interface between adjacent photodiodes.
5. The image sensor of claim 1 , further comprising a plurality of microlenses on the color filter layer.
6. The image sensor of claim 1 , wherein each photodiode of said plurality of photodiodes is located on or adjacent to a shallow trench isolation structure located on or in the substrate.
7. The image sensor of claim 1 , further comprising a second metal line layer in or on said dielectric layer corresponding to the border region between neighboring photodiodes.
8. The image sensor of claim 7 , wherein the second metal line layer comprises a side toward the photodiodes having third and fourth curved surfaces and an apex where the third and fourth curved surfaces meet.
9. The image sensor of claim 1 , further comprising a second dielectric layer, wherein the second metal line layer is in or on said second dielectric layer.
10. The image sensor of claim 1 , wherein the side of the metal line layer toward the photodiodes has a third curved surface concave to a third direction, and a fourth curved surface concave to a fourth direction, the apex being where the first, second, third and fourth curved surfaces meet, wherein the third direction is from a third one of the neighboring photodiodes to the metal line layer, and the fourth direction is from a fourth one of the neighboring photodiodes to the metal line layer.
11. The image sensor of claim 1 , wherein the dielectric layer comprises an oxide, a nitride, or a combination thereof.
12. The image sensor of claim 1 , wherein the metal line layer comprises titanium, aluminum, tantalum, titanium nitride, or any combination thereof.
13. The image sensor of claim 1 , wherein the color filter layer comprises a plurality of red color filters, green color filters, blue color filters, or a combination thereof.
14. The image sensor of claim 1 , wherein the color filter layer comprises a plurality of yellow color filters, cyan color filters, magenta color filters, or a combination thereof.
15. The image sensor of claim 5 , wherein a unique one of the plurality of microlenses is on a unique one of the plurality of color filters, and each unique color filter is over a unique one of the plurality of the photodiodes.