Light-emitting device, manufacturing method thereof, and lamp
The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp.
1. A light-emitting device, comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein
the titanium oxide-based conductive film layer comprises a first layer made of a granular crystal and a second layer made of a columnar crystal, the second layer being arranged on the p-type semiconductor layer side of the first layer.
2. The light-emitting device according to claim 1 , wherein
the surface of the first layer opposite to the second layer side is in a concavo-convex shape.
3. The light-emitting device according to claim 2 , wherein
the concavo-convex shape formed on the first layer is formed by etching, and the first layer is made of a material in which the etching rate is higher than an etching rate of a material used for the second layer.
4. The light-emitting device according to claim 2 , wherein
the concavo-convex shape formed on the first layer includes randomly formed concave part and convex part.
5. The light-emitting device according to claim 4 , wherein
the elevation difference between the concave part and the convex part is within the range from 35 nm to 2000 nm.
6. The light-emitting device according to claim 1 , wherein
the second layer of the titanium oxide-base conductive film layer is of an oxide comprising Ti and at least one element selected from the group consisting of Ta, Nb, V, Mo, W and Sb.
7. The light-emitting device according to claim 1 , wherein
the thickness of the second layer of the titanium oxide-base conductive film layer is within the range from 35 to 2000 nm.
8. The light-emitting device according to claim 1 , wherein
the first layer of the titanium oxide-based conductive film layer is of an oxide comprising Ti and at least one element selected from the group consisting of Ta, Nb, V, Mo, W and Sb.
9. The light-emitting device according to claim 1 , wherein
the thickness of the first layer of the titanium oxide-base conductive film layer is within the range from 35 to 2000 nm.
10. The light-emitting device according to claim 1 , wherein
the light-emitting device is made of a nitride-based semiconductor light-emitting device.
11. The light-emitting device according to claim 10 , wherein the nitride-based semiconductor light-emitting device is a GaN-based semiconductor light-emitting device.
12. A lamp comprising the light-emitting device according to claim 1 .
13. The light-emitting device according to claim 1 , wherein a positive electrode is formed on the first layer.
14. The light-emitting device according to claim 1 , wherein a metal layer is provided between the second layer and the p-type semiconductor layer, the metal layer being made of a material selected from the group consisting of Ni, Ni oxide, Pt, Pd, Ru, Rh, Re, or Os.
15. The light-emitting device according to claim 1 , wherein a metal layer is provided between the first layer and the second layer, the metal layer being made of a material selected from the group consisting of Ni, Ni oxide, Pt, Pd, Ru, Rh, Re, or Os.
16. A method of manufacturing a light-emitting device, comprising
forming a first layer by a vacuum vapor deposition method, and
forming a second layer, wherein
the light-emitting layer includes an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, and
the titanium oxide-base conductive film layer comprises the first layer made of a granular crystal and the second layer made of a columnar crystal, the second layer being arranged on the p-type semiconductor layer side of the first layer.
17. The method of manufacturing a light-emitting device according to claim 16 , wherein
the second layer is formed by a sputtering method.
18. The method of manufacturing a light-emitting device according to claim 16 , wherein
the second layer is formed at an atmospheric temperature of 300 to 800° C. by a vacuum vapor method.
19. The method of manufacturing a light-emitting device according to claim 18 , wherein
a heat treatment is performed at a temperature of 300 to 800° C. after forming the second layer by a vacuum vapor method.
20. The method of manufacturing a light-emitting device according to claim 16 , further comprising a concavo-convex forming step of forming a concavo-convex shape on the surface of the first layer opposite to the second layer side.
21. The method of manufacturing a light-emitting device according to claim 20 , wherein
in the concavo-convex forming step, the concavo-convex shape is formed by a wet etching method.
22. The method of manufacturing a light-emitting device according to claim 21 , wherein
in the concavo-convex forming step, wet etching is performed using at least one selected from the group consisting of hydrofluoric acid, phosphoric acid, sulfuric acid, hydrochloric acid, hydrofluoric acid/nitric acid mixture, hydrofluoric acid/hydrogen peroxide mixture, hydrofluoric acid/ammonium fluoride mixture and hydrofluosilicid acid as an etching solution.
23. A lamp comprising a light-emitting device obtained by the method of manufacturing a light-emitting device according to claim 16 .