Method for increasing the removal rate of photoresist layer
View Patent ↗A method for increasing the removal rate of a photoresist layer is provided. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.
1. A method for increasing the removal rate of a photoresist layer, comprising:
providing a substrate; and
performing a plasma treatment to the substrate before forming a photoresist layer, wherein a gas used for performing the plasma treatment is selected from the group consisting of oxygen, nitrous oxide and combination thereof.
2. The method of claim 1 , wherein the plasma treatment is performed at a temperature between 100° C. to 260° C.
3. The method of claim 1 , wherein before forming the photoresist layer, further comprises performing a cleaning operation.
4. The method of claim 3 , wherein the cleaning operation is performed using a solution mixture without dilute hydrofluoric acid.
5. The method of claim 4 , wherein the solution mixture contains ammonium hydroxide, hydrogen peroxide and de-ionized water.
6. The method of claim 4 , wherein the pre-treatment process is performed after the cleaning operation.
7. The method of claim 1 , further comprising:
after the photoresist layer is formed, performing an ion implant process using the photoresist layer as a mask to form a doped region in the substrate; and removing the photoresist layer.
8. The method of claim 7 , wherein the step of removing the photoresist layer comprises an ashing process and a cleaning process using at least one cleaning solution.
9. The method of claim 8 , wherein the ashing process is performed without using CF4.
10. The method of claim 8 , wherein the cleaning solution doesn't contain dilute hydrofluoric acid.
11. The method of claim 8 , wherein the cleaning process includes using a first solution mixture first and then using a second solution mixture.
12. The method of claim 11 , wherein the first solution mixture contains ammonium hydroxide, hydrogen peroxide and de-ionized water, and the second solution mixture contains hydrochloric acid, hydrogen peroxide and de-ionized water.
13. The method of claim 1 , wherein the plasma treatment is performed to form a buffer layer over the substrate.
14. The method of claim 1 , wherein the substrate includes a structural component having logic devices or memory devices thereon.