Magnetic sensor including magnetic field detectors and field resistors arranged on inclined surfaces
A magnetic sensor including sensor bridge circuits, each including a pair of magnetic field detectors and a pair of fixed resistors. The magnetic field detectors in each bridge circuit are located on the same inclined surface, while the fixed resistors are each located on a different inclined surface. The inclined surface configuration reduces the number of fabrication steps necessary to fabricate the magnetic sensor.
1. A magnetic sensor, comprising:
a substrate; and
a plurality of sensor bridge circuits each including a pair of magnetic field detectors and a pair of fixed resistors arranged on the substrate, the pair of the magnetic field detectors and the pair of the fixed resistors being connected to form a bridge circuit, each of the magnetic field detectors being formed of a magneto-resistance effect element, and magnetization directions of the magnetic field detectors intersect with each other in a three-dimensional manner,
wherein
the substrate has a plurality of inclined surfaces, and normal directions of the inclined surfaces intersect with each other in a three-dimensional manner,
the pair of the magnetic field detectors in each of the sensor bridge circuits is arranged on the same inclined surface, and
each one of the pair of fixed resistors in each of the sensor bridge circuits is respectively arranged on a different one of two inclined surfaces which are parallel to each other and different from the inclined surface on which the magnetic field detectors in the respective sensor bridge circuit are arranged.
2. The magnetic sensor as claimed in claim 1 , wherein
the substrate is formed of a (100) single crystal silicon wafer, and has a plurality of inclined surfaces of normal directions intersecting with each other in a three-dimensional manner, each of the inclined surfaces being a (111) orientation crystal plane forming an angle of 55 degrees relative to a surface of the substrate.
3. The magnetic sensor as claimed in claim 1 , wherein each of the fixed resistors includes a magneto-resistance effect element formed of the same layer configuration as the magnetic field detectors, and is covered by a magnetic shielding member with an insulating member of electrical insulation in between.
4. The magnetic sensor as claimed in claim 1 , wherein the magneto-resistance effect element includes a tunnel magneto-resistance effect element.
5. A magnetic sensor, comprising:
a substrate; and
a first sensor bridge circuit, a second sensor bridge circuit, and a third sensor bridge circuit, each of the first sensor bridge circuit, the second sensor bridge circuit, and the third sensor bridge circuit including a pair of magnetic field detectors and a pair of fixed resistors arranged on the substrate and connected to form a bridge circuit, each of the magnetic field detectors being formed of a magneto-resistance effect element, each of the fixed resistors having a constant resistance value not influenced by an external magnetic field, and magnetization directions of the magnetic field detectors intersect with each other in a three-dimensional manner,
wherein
the substrate has a plurality of inclined surfaces, and normal directions of the inclined surfaces intersect with each other in a three-dimensional manner, and
the magnetic field detectors in each of the first sensor bridge circuit, the second sensor bridge circuit, and the third sensor bridge circuit are arranged on the inclined surfaces having normal directions intersecting with each other in a three-dimensional manner, and
the pair of the magnetic field detectors in a same one of the first sensor bridge circuit, the second sensor bridge circuit, and the third sensor bridge circuit is arranged on an inclined surface having the same normal direction, and
each one of the pair of fixed resistors in each of the sensor bridge circuits is respectively arranged on a different one of two inclined surfaces which are parallel to each other and different from the inclined surface on which the magnetic field detectors in the respective sensor bridge circuit are arranged.
6. The magnetic sensor as claimed in claim 5 , wherein
the substrate is formed of a (100) single crystal silicon wafer, and has a plurality of inclined surfaces of normal directions intersecting with each other in a three-dimensional manner, each of the inclined surfaces being a (111) orientation crystal plane forming an angle of 55 degrees relative to a surface of the substrate.
7. The magnetic sensor as claimed in claim 5 , wherein each of the fixed resistors includes a magneto-resistance effect element formed of the same layer configuration as the magnetic field detectors, and is covered by a magnetic shielding member with an insulating member of electrical insulation in between.
8. The magnetic sensor as claimed in claim 5 , wherein the magneto-resistance effect element includes a tunnel magneto-resistance effect element.