IP Library › Granted Patent US 8,138,555
Granted Patent B2
US 8,138,555 · App. 11/941,147 · Granted Mar 20, 2012

Semiconductor device and its manufacturing method

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,138,555
App. No.
11/941,147
Granted
Mar 20, 2012
Kind
B2
Abstract

An object of the present invention is to provide an active matrix type display unit having a pixel structure in which a pixel electrode formed in a pixel portion, a scanning line (gate line) and a data line are suitably arranged, and high numerical aperture is realized without increasing the number of masks and the number of processes. In this display unit, a first wiring arranged between a semiconductor film and a substrate through a first insulating film is overlapped with this semiconductor film and is used as a light interrupting film. Further, a second insulating film used as a gate insulating film is formed on the semiconductor film. A gate electrode and a second wiring are formed on the second insulating film. The first and second wirings cross each other through the first and second insulating films. A third insulating film is formed as an interlayer insulating film on the second wiring, and a pixel electrode is formed on this third insulating film. The pixel electrode can be overlapped with the first and second wirings so that an area of the pixel electrode can be increased in the display unit of a reflection type.

Claims (16)

1. A semiconductor device comprising:

a pixel portion in which a scanning line and a data line cross each other;

a first insulating layer provided between said scanning line and a semiconductor film;

a second insulating layer provided between said data line and said first insulating layer and between said semiconductor film and a gate electrode; and

a third insulating layer provided between said second insulating layer and a first connecting electrode and between said second insulating layer and a pixel electrode and between said second insulating layer and a second connecting electrode;

wherein said gate electrode and said semiconductor film form a crossing portion with said second insulating layer interposed therebetween and said gate electrode is connected to said scanning line outside the crossing portion, and said data line is connected to said semiconductor film by said first connecting electrode, and said pixel electrode and said second connecting electrode are connected on a same plane, and said crossing portion is arranged in an overlapping area of said scanning line and said second connecting electrode, and

wherein said gate electrode comprises a material that is the same as said data line.

2. A device according to claim 1 wherein said semiconductor device is a portable information terminal, an electric diary, a mobile computer, a portable telephone, a video camera, a still camera, a personal computer, a television, a projector or a digital camera.

3. A semiconductor device comprising:

a pixel portion in which a scanning line and a data line cross each other;

a first insulating layer provided between said scanning line and a semiconductor film;

a second insulating layer provided between said data line and said first insulating layer and between said semiconductor film and a gate electrode; and

a third insulating layer provided between said second insulating layer and a first connecting electrode and between said second insulating layer and a pixel electrode and between said second insulating layer and a second connecting electrode;

wherein said gate electrode and said semiconductor film form a crossing portion with said second insulating layer interposed therebetween and said gate electrode is connected to said scanning line outside the crossing portion, and said data line is connected to said semiconductor film by said first connecting electrode, and said pixel electrode and said second connecting electrode are connected on a same plane, and said crossing portion is arranged in an overlapping area of said scanning line and said second connecting electrode, and

wherein an edge part of said pixel electrode overlaps with said data line.

4. A device according to claim 3 wherein said semiconductor device is a portable information terminal, an electric diary, a mobile computer, a portable telephone, a video camera, a still camera, a personal computer, a television, a projector or a digital camera.

Priority Claims (1)
JP 2000-298304 · Sep 29, 2000 · national
Continuity (4)
Division 10890129 · Jul 14, 2004
Division 10330284 · Dec 30, 2002
Division 09961525 · Sep 25, 2001
Related Publication 20080135844A1 · Jun 12, 2008