Plasma processing apparatus
A plasma processing apparatus including a mounting table that includes a mounting table body having a temperature adjusted to be a predetermined level, and an electrostatic chuck disposed on an upper portion of the mounting table body, joined thereto with an acrylic adhesive having a thickness of 60 μm or more, to adsorb the substrate thereon. The apparatus further including first and second heat transfer gas diffusion regions formed at a center and a circumferential edge, respectively, of an upper surface of the electrostatic chuck, and first and second heat transfer gas supply units to supply heat transfer gas to the first and second heat transfer gas diffusion regions, respectively. A volume ratio of the second heat transfer gas diffusion region to the first heat transfer gas diffusion region is equal to or less than 0.1
1. A plasma processing apparatus, in which a substrate is mounted on a mounting table in a processing chamber and processing gas supplied in the processing chamber is made into plasma to perform plasma treatment on the substrate, and an outer peripheral edge of the substrate being projected outside an outer peripheral edge of an upper surface of the mounting table, said plasma processing apparatus comprising:
the mounting table including,
a mounting table body having a temperature adjusted to be a predetermined level, and
an electrostatic chuck having an upper surface and a bottom surface, and included therein electrodes to adsorb the substrate thereon to the upper surface the electrostatic chuck and disposed with the bottom surface of the electrostatic chuck on an upper portion of the mounting table body, the bottom surface of the electrostatic chuck joined to the mounting table body with an acrylic adhesive sheet of a separate material from the electrostatic chuck and having a thickness of 60 μm to 150 μm;
an insulating material thermal sprayed onto a limited part of the upper peripheral portion of the mounting table body, said part including an area of the upper peripheral portion of the mounting table body proximate a side face of the electrostatic chuck;
a focus ring annularly surrounding an outside of the electrostatic chuck, on an upper portion of the mounting table, disposed around an outer periphery of the substrate and having a section extending under the outer peripheral edge of the substrate projected outside of the outer peripheral edge of the mounting table;
a first heat transfer gas diffusion region formed at a center of the upper surface of the electrostatic chuck and a second heat transfer gas diffusion region formed at a circumferential edge of the upper surface of the electrostatic chuck; and
a first heat transfer gas supply unit to supply a first heat transfer gas to the first heat transfer gas diffusion region and a second heat transfer gas supply unit to supply a second heat transfer gas to the second heat transfer gas diffusion region, wherein
a volume ratio of the second heat transfer gas diffusion region to the first heat transfer gas diffusion region is equal to or less than 0.1.
2. The plasma processing apparatus according to claim 1 , wherein
the volume ratio of the second heat transfer gas diffusion region to the first heat transfer gas diffusion region is from 0.02 to 0.07.
3. The plasma processing apparatus according to claim 2 , wherein
the volume ratio of the second heat transfer gas diffusion region to the first heat transfer gas diffusion region is from 0.03 to 0.06.
4. The plasma processing apparatus according to claim 1 , wherein
the first heat transfer gas diffusion region is one, two, or more concave portions formed at the center of the upper surface of the electrostatic chuck and formed with plural convex portions.
5. The plasma processing apparatus according to claim 1 , wherein
the second heat transfer gas diffusion region is an annular concave portion formed at the circumferential edge of the upper surface of the electrostatic chuck.
6. The plasma processing apparatus according to claim 1 , wherein
a supply pressure ratio of the second heat transfer gas supply unit to the first heat transfer gas supply unit is equal to or more than 2.
7. The plasma processing apparatus according to claim 6 , wherein
the supply pressure ratio of the second heat transfer gas supply unit to the first heat transfer gas supply unit is from 2.5 to 4.0.
8. The plasma processing apparatus according to claim 1 , wherein
the supply of the second heat transfer gas by the second heat transfer gas supply unit starts prior to the supply of the first heat transfer gas by the first heat transfer gas supply unit.
9. The plasma processing apparatus according to claim 1 , wherein the upper portion of the mounting table body is recessed.
10. The plasma processing apparatus according to claim 1 , wherein
the insulating material is thermal sprayed on the upper peripheral portion of the mounting table body including an area of the upper peripheral portion about 5 mm interior to a side face of the electrostatic chuck.