Infrared sensors, focal plane arrays and thermal imaging systems
View Patent ↗An infrared sensor and infrared imaging system, wherein said infrared sensor comprises: a first film structure, a second film structure, a gap between said first film structure and said second film structure. Reference light is incident from one of said first film structure and said second film structure. When said gap distance changes, the intensity of transmitted reference light changes, and the intensity of reflected reference light changes. When infrared light is incident, at least one of the said first and second film structures absorbs infrared light and the temperature changes, causing said gap distance to change. By detecting the intensity of said transmitted reference light or reflected reference light, the incident infrared light can be measured.
1. An infrared sensor for detecting infrared light, comprising:
a reference light source;
a first film structure;
a second film structure;
a gap between said first film structure and said second film structure;
a substrate that allows a transmitted portion of a reference light generated by said reference light source to pass;
a first supporting mechanism for supporting said first film structure on said substrate;
wherein said first film structure, said second film structure, said gap form an interferometer; and
wherein the intensity of said transmitted portion of said reference light changes when an infrared light is incident upon said infrared sensor.
2. The infrared sensor of claim 1 , wherein said substrate is transparent to said reference light source and said second film structure are directly attached to said substrate.
3. The infrared sensor of claim 2 , wherein said first supporting mechanism comprises a beam having a first end connected to said first film structure, and a second end connected to at least one of said substrate and said second film structure.
4. The infrared sensor of claim 3 , wherein said beam comprises a first material comprising a first coefficient of thermal expansion (CTE), and a second material comprising a second CTE, wherein said first CTE is different from said second CTE.
5. The infrared sensor of claim 4 , wherein said second material comprises a CTE larger than that of the first material by 50% and is configured as a layer of material attached to the first material of the beam.
6. The infrared sensor of claim 1 , wherein part of said substrate is etched away to allow the passage of reference light.
7. The infrared sensor of claim 1 , further comprises a second supporting mechanism for supporting said second film structure on said substrate.
8. The infrared sensor of claim 1 , wherein said first film structure comprises an infrared absorptive film.
9. The infrared sensor of claim 1 , wherein said second film structure comprises an infrared reflective film.
10. The infrared sensor of claim 9 , wherein said infrared reflective film is transparent to said reference light and electrically conductive.
11. An infrared sensor of claim 1 , wherein said first supporting mechanism comprises a reflexed single structure.
12. An infrared sensor of claim 1 , wherein said first supporting mechanism comprises a rotationally symmetric spinwheel structure.
13. The infrared sensor of claim 1 , wherein said first supporting mechanism comprises a microbridge having at least two mirrorly symmetric and straight beams supporting said first film structure.
14. The infrared sensor of claim 1 , wherein said first film structure comprises at least two layers of material, wherein said layers of material are symmetrically arranged.
15. The infrared sensor of claim 1 , wherein said first film structure comprises a layer of material selected from a group consisting of: silicon oxide (SiO), silicon nitride (SiNx) and amorphous silicon (a-Si).
16. The infrared sensor of claim 1 , wherein said first film structure comprises a five layer symmetric structure selected from a group consisting of: a-Si/SiO2/a-Si/SiO2/a-Si and SiNx/SiO2/a-Si/SiO2/SiNx.
17. The infrared sensor of claim 1 , wherein said first film structure comprises a layer of material having a thickness of a quarter wavelength of the reference light in the material.
18. The infrared sensor of claim 1 , wherein said second film structure is part of said substrate.
19. The infrared sensor of claim 1 , wherein said substrate is highly reflective to infrared light.
20. The infrared sensor of claim 1 , wherein said substrate comprises a material selected from indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (InZnO).
21. The infrared sensor of claim 1 , wherein said second film structure comprises a material selected from ITO, ZnO, InZnO.
22. The infrared sensor of claim 1 , wherein said first film structure absorbs at least one of ultraviolet light and milliwave light.
23. The infrared sensor of claim 1 , wherein said substrate comprises a CMOS circuit.
24. The infrared sensor of claim 1 , wherein said substrate comprises a CCD circuit.
25. An infrared sensor for detecting infrared light, comprising:
a reference light source;
a first film structure;
a second film structure;
a gap between said first film structure and said second film structure;
a substrate comprising indium tin oxide (ITO);
a first supporting mechanism for supporting said first film structure on said substrate;
wherein said first film structure, said second film structure, and said gap form an interferometer; and
wherein the intensity of the reference light transmitted through the substrate changes when an infrared light is incident upon said infrared sensor.
26. An infrared sensor for detecting infrared light, comprising:
a reference light source;
a first film structure;
a second film structure;
a gap between said first film structure and said second film structure;
a substrate transparent to a reference light generated by said reference light source;
a first supporting mechanism for supporting said first film structure on said substrate;
wherein said first film structure, said second film structure, said gap form an interferometer; and
wherein the intensity of said reference light transmitted through said substrate changes when an infrared light is incident upon said infrared sensor.
27. The infrared sensor in claim 26 , wherein said first supporting mechanism comprises a first section that is close to the substrate and has good thermal contact with the substrate, a second section that is close to the first film structure that it supports and has good thermal contact with the first film structure, and a third thermally insulating section between said first section and said second section.
28. The infrared sensor of claim 27 , wherein said first section moves in opposite direction from said second section when the temperature of said infrared sensor changes.