Manufacturing method of electro line for liquid crystal display device
A manufacturing method of an electro line for a liquid crystal display device includes depositing a barrier layer made of a conducting material on a substrate, depositing a copper layer (Cu) on the barrier layer, wet-etching the Cu layer using a first etchant, and dry-etching the barrier layer using a second etchant using the wet-etched Cu layer as an etch mask.
1. A manufacturing method of a thin film transistor for a liquid crystal display device, comprising:
forming a first metal layer including molybdenum (Mo) on a substrate;
forming a second metal layer including copper (Cu) on the first metal layer; and
patterning the first metal layer and the second metal layer by an etchant including base materials and an additive, the base materials including an oxidizing agent and an acid, wherein the additive lowers potential difference between the first metal layer and the second metal layer.
2. The method of claim 1 , wherein the additive includes ammonium acetate.
3. The method of claim 1 , wherein the oxidizing agent includes hydrogen peroxide (H 2 O 2 ).
4. The method of claim 1 , wherein the additive prevents an undercut of the first metal layer.
5. The method of claim 1 , wherein the acid includes acetic acid (CH 3 COOH).
6. The method of claim 1 , wherein the first metal layer has a thickness within a range of about 50 Å to about 200 Å.
7. The method of claim 1 , wherein the second metal layer has a thickness within a range of about 1,500 Å to about 2,500 Å.
8. The method of claim 1 , wherein patterning the first metal layer and the second metal layer further comprising substantially subsequently etching the first and second metal layers.
9. The method of claim 1 , wherein the first and second metal layers has a substantially uniform pattern.
10. The method of claim 1 , wherein the first and second metal layers include an electro line.
11. The method of claim 1 , wherein the first and second metal layers include one of a gate line, a data line, and gate and data lines.
12. The method of claim 1 , wherein the first and second metal layers include one of a gate electrode, source and drain electrodes, and gate, source, and drain electrodes.