Semiconductor device having first and second device isolation layers formed of different insulation materials
A semiconductor device comprising a trench device isolation layer and a method for fabricating the semiconductor device are disclosed. The method comprises forming a plurality of first trenches on a first region of a semiconductor substrate, filling the first trenches with a first insulation material to form first device isolation layers, forming a plurality of second trenches on a second region of the semiconductor substrate, and filling the second trenches with a second insulation material different from the first insulation material to form second device isolation layers, wherein the first trenches and the second trenches are formed using different respective processes.
1. A semiconductor device, comprising:
a semiconductor substrate comprising a first region and a second region;
a plurality of first trenches formed in the first region to a first depth;
a first insulating layer disposed on sidewall and bottom surfaces of each one of the plurality of first trenches leaving a respective first inside portion within each one of the plurality of first trenches, wherein the first insulating layer comprises a first oxide layer disposed on the sidewall and bottom surfaces of each one of the plurality of first trenches, and a first liner layer disposed on the first oxide layer;
first device isolation layers respectively disposed in the plurality of first trenches, wherein the first device isolation layers are made of only a first insulation material completely filling the first inside portion of each one of the plurality of first trenches;
a plurality of second trenches formed in the second region to a second depth less than the first depth;
a second insulating layer disposed on sidewall and bottom surfaces of each one of the plurality of second trenches leaving a respective second inside portion within each one of the plurality of second trenches, wherein the second insulating layer comprises a second oxide layer disposed on the sidewall and bottom surfaces of each one of the plurality of second trenches, and a second liner layer disposed on the second oxide layer, wherein the second liner layer is thinner than the first liner layer; and
second device isolation layers respectively disposed in the plurality of second trenches, wherein the second device isolation layers are made of only a second insulation material completely filling the second inside portion of each one of the plurality of second trenches, the second insulation material being different from the first insulation material.
2. The semiconductor device of claim 1 , wherein the first insulation material is a high-density plasma CVD oxide and the second insulation material is a USG oxide.
3. The semiconductor device of claim 1 , wherein the first region is a peripheral circuit region of the semiconductor device and the second region is a cell array region of the semiconductor device.
4. The semiconductor device of claim 3 , wherein one of the plurality of first trenches is a boundary first trench disposed on a boundary between the peripheral circuit region and the cell array region.
5. The semiconductor device of claim 1 , wherein at least one of the plurality of first trenches has a larger aspect ratio than at least one of the plurality of second trenches.
6. The semiconductor device of claim 1 , wherein at least one of the plurality of first trenches has a different width than another one of the plurality of first trenches, and each one of the second trenches has substantially the same width.
7. The semiconductor device of claim 1 , further comprising:
first active regions defined by the first device isolation layers in the first region of the semiconductor substrate;
second active regions defined by the first device isolation layers in the second region of the semiconductor substrate;
floating gate electrodes disposed on the first active regions;
an intergate dielectric layer disposed on the floating gate electrodes;
a control gate electrode disposed on the integrate dielectric layer; and
voltage gate electrodes disposed on the second active regions.
8. A semiconductor device, comprising:
a semiconductor substrate comprising a first region and a second region;
a plurality of first trenches formed in the first region to a first depth;
a first insulating layer disposed on sidewall and bottom surfaces of each one of the plurality of first trenches leaving a respective first inside portion within each one of the plurality of first trenches, wherein the first insulating layer comprises a first oxide layer disposed on the sidewall and bottom surfaces of each one of the plurality of first trenches, and a first liner layer disposed on the first oxide layer;
first device isolation layers respectively disposed in the plurality of first trenches, wherein the first device isolation layers are made of only a first insulation material completely filling the first inside portion of each one of the plurality of first trenches;
a plurality of second trenches formed in the second region to a second depth less than the first depth;
a second insulating layer disposed on sidewall and bottom surfaces of each one of the plurality of second trenches leaving a respective second inside portion within each one of the plurality of second trenches, wherein the second insulating layer comprises a second oxide layer disposed on the sidewall and bottom surfaces of each one of the plurality of second trenches, and a second liner layer disposed on the second oxide layer, wherein the second oxide layer is thinner than the first oxide layer; and
second device isolation layers respectively disposed in the plurality of second trenches, wherein the second device isolation layers are made of only a second insulation material completely filling the second inside portion of each one of the plurality of second trenches, the second insulation material being different from the first insulation material.
9. A semiconductor device, comprising:
a semiconductor substrate comprising a first region and a second region;
a plurality of first trenches formed in the first region to a first depth;
a first insulating layer disposed on sidewall and bottom surfaces of each one of the plurality of first trenches leaving a respective first inside portion within each one of the plurality of first trenches, wherein the first insulating layer comprises a first oxide layer disposed on the sidewall and bottom surfaces of each one of the plurality of first trenches, and a first liner layer disposed on the first oxide layer;
first device isolation layers respectively disposed in the plurality of first trenches, wherein the first device isolation layers are made of only a first insulation material completely filling the first inside portion of each one of the plurality of first trenches;
a plurality of second trenches formed in the second region to a second depth less than the first depth;
a second insulating layer disposed on sidewall and bottom surfaces of each one of the plurality of second trenches leaving a respective second inside portion within each one of the plurality of second trenches, wherein the second insulating layer comprises a second oxide layer disposed on the sidewall and bottom surfaces of each one of the plurality of second trenches, and a second liner layer disposed on the second oxide layer, wherein the second oxide layer is thinner than the first oxide layer, and the second liner layer is thinner than the first liner layer; and
second device isolation layers respectively disposed in the plurality of second trenches, wherein the second device isolation layers are made of only a second insulation material completely filling the second inside portion of each one of the plurality of second trenches, the second insulation material being different from the first insulation material.
10. A semiconductor device, comprising:
a semiconductor substrate comprising a first region and a second region;
a plurality of first trenches formed in the first region to a first depth;
a first insulating layer disposed on sidewall and bottom surfaces of each one of the plurality of first trenches leaving a respective first inside portion within each one of the plurality of first trenches, wherein the first insulating layer comprises a first oxide layer and a first liner layer;
first device isolation layers respectively disposed in the plurality of first trenches, wherein the first device isolation layers are made of only a first insulation material completely filling the first inside portion of each one of the plurality of first trenches;
a plurality of second trenches formed in the second region to a second depth less than the first depth;
a second insulating layer disposed on sidewall and bottom surfaces of each one of the plurality of second trenches leaving a respective second inside portion within each one of the plurality of second trenches, wherein the second insulating layer comprises a second oxide layer and a second liner layer, wherein the second oxide layer is thinner than the first oxide layer, and the second liner layer is thinner than the first liner layer; and
second device isolation layers respectively disposed in the plurality of second trenches, wherein the second device isolation layers are made of only a second insulation material completely filling the second inside portion of each one of the plurality of second trenches, the second insulation material being different from the first insulation material,
wherein an upper surface of the first insulation material and an upper surface of the second insulation material are disposed at a same level as an upper surface of the semiconductor substrate.
11. The semiconductor device of claim 10 , wherein the first insulation material is a high-density plasma CVD oxide and the second insulation material is a USG oxide.
12. The semiconductor device of claim 10 , wherein the first region is a peripheral circuit region of the semiconductor device and the second region is a cell array region of the semiconductor device.
13. The semiconductor device of claim 12 , further comprising:
a boundary trench formed to the first depth and disposed on a boundary between the peripheral circuit region and the cell array region, wherein the first insulating layer is disposed on sidewall and bottom surfaces of the boundary trench leaving an inside portion within the boundary trench; and
a boundary device isolation layer disposed in the boundary trench, wherein the boundary device isolation layer is made of only the first insulation material completely filling the inside portion of the boundary trench.
14. The semiconductor device of claim 10 , further comprising:
a floating gate electrode disposed on the first region of the semiconductor;
an intergate dielectric layer disposed on the floating gate electrode;
a control gate electrode disposed on the integrate dielectric layer; and
voltage gate electrode disposed on the second region of the semiconductor substrate.
15. A semiconductor device comprising:
a semiconductor substrate comprising a first region and a second region;
a plurality of first trenches formed in the first region to a first depth;
a first insulating layer disposed on sidewall and bottom surfaces of each one of the plurality of first trenches leaving a respective first inside portion within each one of the plurality of first trenches, wherein the first insulating layer comprises a first oxide layer and a first liner layer;
first device isolation layers respectively disposed in the plurality of first trenches, wherein the first device isolation layers are made of only a first insulation material completely filling the first inside portion of each one of the plurality of first trenches;
a plurality of second trenches formed in the second region to a second depth less than the first depth;
a second insulating layer disposed on sidewall and bottom surfaces of each one of the plurality of second trenches leaving a respective second inside portion within each one of the plurality of second trenches, wherein the second insulating layer comprises a second oxide layer and a second liner layer, the second oxide layer is thinner than the first oxide layer, and the second liner layer is thinner than the first liner layer; and
second device isolation layers respectively disposed in the plurality of second trenches, wherein the second device isolation layers are made of only a second insulation material completely filling the second inside portion of each one of the plurality of second trenches, the second insulation material being different from the first insulation material,
wherein an upper surface of the first insulation material and an upper surface of the second insulation material are disposed above an upper surface of the semiconductor substrate.