Non-volatile memory and method with multi-stream updating
In a memory that is programmable page by page and each page having multiple sectors that are once-programmable, even if successive writes are sequential, the data recorded to an update block may be fragmented and non-sequential. Instead of recording update data to an update block, the data is being recorded in at least two interleaving streams. When a full page of data is available, it is recorded to the update block. Otherwise, it is temporarily recorded to the scratch pad block until a full page of data becomes available to be transferred to the update block. Preferably, a pipeline operation allows the recording to the update block to be set up as soon as the host write command indicates a full page could be written. If the actual write data is incomplete due to interruptions, the setup will be canceled and recording is made to the scratch pad block instead.
1. A nonvolatile memory, comprising:
a memory array organized into a plurality of blocks, each block have memory cells that are erasable together;
a first block wherein a plurality of addressable units of data are written with a first degree of parallelism;
a second block;
a controller for controlling operations of said memory array, including:
copying the plurality of addressable units of data from said first block to said second block where they are written in a write operation having a second degree of parallelism that is higher than the first degree of parallelism; and
writing additional addressable units of data to the first block while the first block contains the plurality of addressable units of data.
2. The nonvolatile memory of claim 1 wherein:
the first degree of parallelism is less than the parallelism of programming a metapage of data and the second degree of parallelism is the degree of parallelism of programming a metapage of data, and
wherein the memory is constituted from multiple memory planes, each memory plane being written to page by page; and
the metapage is linking a page from each of the multiple memory planes for operation in parallel.
3. The nonvolatile memory of claim 1 wherein:
the plurality of addressable units of data form a portion of a first file, the portion containing less than a metapage of data, and
said controller copying the plurality of addressable units of data is in parallel with programming of a portion of a second file, such that the portion of the first file and the portion of the second file form a metapage of data in the second block.
4. The nonvolatile memory of claim 1 wherein:
the second block contains a plurality of multi-level cells, and
the plurality of addressable units of data form a first metapage in the first block and are copied to the second block in parallel with writing a second metapage of data to the second block such that the first page and the second page form upper and lower pages of programming of the plurality of multi-level cells.
5. The nonvolatile memory of claim 1 wherein:
the plurality of addressable units of data are written to the second block in parallel with additional data to achieve the second degree of parallelism.