In-Ga-Zn-Sn type oxide sinter and target for physical film deposition
An oxide sintered body including an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and including a compound shown by Ga 2 In 6 Sn 2 O 16 or (Ga,In) 2 O 3 .
1. An oxide sintered body comprising an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and comprising a compound shown by Ga 2 In 6 Sn 2 O 16 or (Ga,In) 2 O 3 .
2. The oxide sintered body according to claim 1 , wherein the atomic ratio of each element to the total (In+Ga+Zn+Sn) of the indium element (In), gallium element (Ga), zinc element (Sn) and tin element (Sn) satisfies the following relationships:
0.15<In/(In+Ga+Zn+Sn)<0.8
0.05<Ga/(In+Ga+Zn+Sn)<0.5
0.05<Zn/(In+Ga+Zn+Sn)<0.6
0.05<Sn/(In+Ga+Zn+Sn)<0.7.
3. A target for physical film formation which comprises the oxide sintered body according to claim 1 .
4. The target for physical film formation according to claim 3 , which is a sputtering target having a bulk resistance of less than 20 mΩcm.
5. An oxide semiconductor film formed by sputtering the target according to claim 3 .
6. A thin film transistor which comprises as an active layer the oxide semiconductor film according to claim 5 .
7. An oxide sintered body comprising an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and comprising a compound shown by Ga 2 In 6 Sn 2 O 16 and a compound shown by In 2 O 3 .
8. A target for physical film formation which comprises the oxide sintered body according to claim 7 .
9. An oxide semiconductor film formed by sputtering the target according to claim 8 .
10. A thin film transistor which comprises as an active layer the oxide semiconductor film according to claim 9 .
11. An oxide sintered body comprising an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and comprising a compound shown by Ga 2 In 6 Sn 2 O 16 and a compound shown by InGaZnO 4 .
12. A target for physical film formation which comprises the oxide sintered body according to claim 11 .
13. An oxide semiconductor film formed by sputtering the target according to claim 12 .
14. A thin film transistor which comprises as an active layer the oxide semiconductor film according to claim 13 .
15. An oxide sintered body comprising an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and comprising as a main component a compound shown by Ga 2.4 In 5.6 Sn 2 O 16 .
16. A target for physical film formation which comprises the oxide sintered body according to claim 15 .
17. An oxide semiconductor film formed by sputtering the target according to claim 16 .
18. A thin film transistor which comprises as an active layer the oxide semiconductor film according to claim 17 .