Photo-voltaic cell device and display panel

1. A photo-voltaic cell device, comprising:

a first electrode;

an N-type doped silicon-rich dielectric layer, disposed on the first electrode, wherein the N-type doped silicon-rich dielectric layer comprises a first silicon-rich dielectric material doped with an N-type dopant;

a P-type doped silicon-rich dielectric layer, disposed on the N-type doped silicon-rich dielectric layer, wherein the P-type doped silicon-rich dielectric layer comprises a second silicon-rich dielectric material doped with a P-type dopant; and

a second electrode, disposed on the P-type doped silicon-rich dielectric layer,

wherein each of the first silicon-rich dielectric material and the second silicon-rich dielectric material is respectively selected from Si-rich SiO x , Si-rich SiN y , Si-rich SiO x N y , Si-rich SiC z , Si-rich SiH w O x , Si-rich SiH w N y , Si-rich SiH w O x N y , or a combination thereof, wherein 0<w<4, 0<x<2, 0<y<1.34, and 0<z<1.

2. The photo-voltaic cell device as claimed in claim 1 , further comprising an intrinsic layer disposed between the N-type doped silicon-rich dielectric layer and the P-type doped silicon-rich dielectric layer.

3. The photo-voltaic cell device as claimed in claim 2 , wherein a material of the intrinsic layer comprises amorphous silicon, polysilicon, a silicon-rich dielectric layer, or a combination thereof.

4. The photo-voltaic cell device as claimed in claim 3 , wherein the silicon-rich dielectric layer comprises a silicon-rich silicon oxide layer, a silicon-rich silicon nitride layer, a silicon-rich silicon oxynitride layer, a silicon-rich silicon carbide layer, or a combination thereof.

5. The photo-voltaic cell device as claimed in claim 1 , wherein the N-type doped silicon-rich dielectric layer and the P-type doped silicon-rich dielectric layer further comprise silicon nanoparticles.

6. The photo-voltaic cell device as claimed in claim 1 , wherein at least one of the first electrode and the second electrode is a transparent electrode.

7. The photo-voltaic cell device as claimed in claim 1 , wherein the N-type dopant comprises nitrogen, phosphorous, arsenic, antimony, or bismuth.

8. The photo-voltaic cell device as claimed in claim 1 , wherein the P-type dopant comprises boron, aluminum, gallium, indium, or thallium.

9. A photo-voltaic cell device, comprising:

a first electrode;

an N-type doped silicon-rich dielectric layer, disposed on the first electrode, wherein the N-type doped silicon-rich dielectric layer comprises a first silicon-rich dielectric material doped with an N-type dopant;

an intrinsic layer, disposed on the N-type doped silicon-rich dielectric layer;

a P-type doped silicon-rich dielectric layer, disposed on the intrinsic layer, wherein the P-type doped silicon-rich dielectric layer comprises a second silicon-rich dielectric material doped with a P-type dopant; and

a second electrode, disposed on the P-type doped silicon-rich dielectric layer,

wherein each of the first silicon-rich dielectric material and the second silicon-rich dielectric material is respectively selected from Si-rich SiO x , Si-rich SiN y , Si-rich SiO x N y , Si-rich SiC z , Si-rich SiH w O x , Si-rich SiH w N y , Si-rich SiH w N y , or a combination thereof, wherein 0<w<4, 0<x<2, 0<y<1.34, and 0<z<1.

10. The photo-voltaic cell device as claimed in claim 9 , wherein a material of the intrinsic layer comprises amorphous silicon, polysilicon, a silicon-rich dielectric layer, or a combination thereof.

11. The photo-voltaic cell device as claimed in claim 10 , wherein the silicon-rich dielectric layer comprises a silicon-rich silicon oxide layer, a silicon-rich silicon nitride layer, a silicon-rich silicon oxynitride layer, a silicon-rich silicon carbide layer, or a combination thereof.

12. The photo-voltaic cell device as claimed in claim 9 , wherein the N-type doped silicon-rich dielectric layer and the P-type doped silicon-rich dielectric layer further comprise silicon nanoparticles.

13. The photo-voltaic cell device as claimed in claim 9 , wherein at least one of the first electrode and the second electrode is a transparent electrode.

14. The photo-voltaic cell device as claimed in claim 9 , wherein the N-type dopant comprises nitrogen, phosphorous, arsenic, antimony, or bismuth.

15. The photo-voltaic cell device as claimed in claim 9 , wherein the P-type dopant comprises boron, aluminum, gallium, indium, or thallium.

16. A display panel, having a pixel region and a sensing region, comprising:

a first substrate, comprising a pixel array and at least a photo-voltaic cell device disposed on the first substrate, the pixel array being disposed in the pixel region and comprising a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors, the at least a photo-voltaic cell device being disposed in the sensing region and comprising:

a first electrode;

a first silicon-rich dielectric layer, disposed on the first electrode, wherein the first silicon-rich dielectric layer comprises a first silicon-rich dielectric material doped with a first-type ion;

a second silicon-rich dielectric layer, disposed on the first silicon-rich dielectric layer, wherein the second silicon-rich dielectric layer comprises a second silicon-rich dielectric material doped with a second-type ion;

a second electrode, disposed on the second silicon-rich dielectric layer,

wherein the first silicon-rich dielectric material and the second silicon-rich dielectric material are respectively selected from Si-rich SiO x , Si-rich SiN y , Si-rich SiO x N y , Si-rich SiC z , Si-rich SiH w O x , Si-rich SiH w N y , Si-rich SiH w O x N y , or a combination thereof, wherein 0<w<4, 0<x<2, 0<y<1.34, and 0<z<1;

a second substrate, disposed opposite to the first substrate; and

a display medium, sandwiched between the first substrate and the second substrate.

17. The display panel as claimed in claim 16 , wherein the plurality of pixel electrodes of the pixel array and the second electrode of the at least a photo-voltaic cell device are formed together in one film layer.

18. The display panel as claimed in claim 16 , wherein each of the thin film transistors includes a gate electrode, a source electrode and a drain electrode, and source electrodes and drain electrodes of the plurality of thin film transistors and the first electrode of the at least a photo-voltaic cell device are formed together in one film layer.

19. The display panel as claimed in claim 16 , wherein the plurality of thin film transistors includes amorphous silicon thin film transistors or polysilicon thin film transistors.

20. A photo-voltaic cell device, comprising:

a first electrode;

a second electrode;

an N-type doped silicon-rich dielectric layer, disposed between the first electrode and the second electrode, wherein the N-type doped silicon-rich dielectric layer comprises a first silicon-rich dielectric material doped with an N-type dopant; and

a P-type doped silicon-rich dielectric layer, disposed between the N-type doped silicon-rich dielectric layer and the second electrode, wherein the P-type doped silicon-rich dielectric layer comprises a second silicon-rich dielectric material doped with a P-type dopant,

wherein the first silicon-rich dielectric material and the second silicon-rich dielectric material are respectively selected from Si-rich SiO x , Si-rich SiN y , Si-rich SiO x N y , Si-rich SiC z , Si-rich SiH w O x , Si-rich SiH w N y , Si-rich SiH w O x N y , or a combination thereof, wherein 0<w<4, 0<x<2, 0<y<1.34, and 0<z<1.

21. The photo-voltaic cell device as claimed in claim 20 , further comprising an intrinsic layer, the photo-voltaic cell device being disposed between the N-type doped silicon-rich dielectric layer and the P-type doped silicon-rich dielectric layer.

22. The photo-voltaic cell device as claimed in claim 20 , wherein at least one of the first electrode and the second electrode is a transparent electrode.

23. A method of fabricating a photo-voltaic cell device, comprising:

forming a first electrode;

forming a second electrode;

forming an N-type doped silicon-rich dielectric layer, disposed between the first electrode and the second electrode, wherein the N-type doped silicon-rich dielectric layer comprises a first silicon-rich dielectric material doped with an N-type dopant; and

forming a P-type doped silicon-rich dielectric layer, disposed between the N-type doped silicon-rich dielectric layer and the second electrode, wherein the P-type doped silicon-rich dielectric layer comprises a second silicon-rich dielectric material doped with a P-type dopant,

wherein the first silicon-rich dielectric material and the second silicon-rich dielectric material are respectively selected from Si-rich SiO x , Si-rich SiN y , Si-rich SiO x N y , Si-rich SiC z , Si-rich SiH w O x , Si-rich SiH w N y , Si-rich SiH w O x N y , or a combination thereof, wherein 0<w<4, 0<x<2, 0<y<1.34, and 0<z<1.