Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
An object of the present invention is to provide a novel semiconductor device which is excellent in stability, uniformity, reproducibility, heat resistance, durability and the like, and can exert excellent transistor properties. The semiconductor device is a thin-film transistor, and this thin-film transistor uses, as an active layer, a polycrystalline oxide semiconductor thin film containing In and two or more metals other than In and having an electron carrier concentration of less than 1×10 18 /cm 3 .
1. A polycrystalline semiconductor thin film which contains indium, a positive bivalent element and oxygen,
the thin film having a crystallinity with a locking curve half value width of 1° or less in an X-ray diffraction method,
wherein crystals are aligned in a predetermined direction.
2. The polycrystalline semiconductor thin film according to claim 1 , wherein an X-ray diffraction pattern in the X-ray diffraction method is the pattern of Vicks byte structure, and a diffraction intensity ratio (I(222)/I(400)) between a (222) peak intensity (I(222)) and a (400) peak intensity (4400)) is I(222)/I(400)<1.0.
3. The polycrystalline semiconductor thin film according to claim 1 , wherein an X-ray diffraction pattern in the X-ray diffraction method is the pattern of Vicks byte structure, and a diffraction intensity ratio (I(222)/I(400)) between a (222) peak intensity (I(222)) and a (400) peak intensity (4400)) is I(222)/I(400)>10.
4. The polycrystalline semiconductor thin film according to claim 1 , wherein a relation between the number (=[In]) of the atoms of indium and the number (=[X]) of the atoms of the positive bivalent element satisfies a ratio [X]/([X]+[In])=0.0001 to 0.13.
5. The polycrystalline semiconductor thin film according to claim 1 , wherein the positive bivalent element is one or more elements selected from the group consisting of zinc, magnesium, copper, cobalt, nickel, calcium and strontium.
6. The polycrystalline semiconductor thin film according to claim 1 , which contains a positive tetravalent element in an amount smaller than that of the positive bivalent element.
7. The polycrystalline semiconductor thin film according to claim 1 , which is insoluble in a phosphoric acid-based etching solution (PAN), and soluble in an oxalic acid-based etching solution.
8. A process for producing the polycrystalline semiconductor thin film according to claim 1 , the process comprising:
a step of forming an amorphous film at a substrate temperature of 150° C. or less; and
a step of crystallizing the amorphous film at a temperature above 150° C. and not more than 500° C. to produce the polycrystalline semiconductor thin film.
9. A field effect transistor which uses, as an active layer, the polycrystalline semiconductor thin film according to claim 1 .
10. A process for producing the field effect transistor according to claim 9 , the process comprising:
a step of forming an amorphous film as the active layer at a substrate temperature of 150° C. or less; and
a step of crystallizing the amorphous film at a temperature above 150° C. and not more than 500° C. to produce the polycrystalline semiconductor thin film.