IP Library › Granted Patent US 8,164,092
Granted Patent B2
US 8,164,092 · App. 13/004,975 · Granted Apr 24, 2012

PIN structures including intrinsic gallium arsenide, devices incorporating the same, and related methods

Assignee: The University of Utah Research Foundation
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Quick Facts
Patent No.
US 8,164,092
App. No.
13/004,975
Granted
Apr 24, 2012
Kind
B2
Abstract

Provided herein are PIN structures including a layer of amorphous n-type silicon, a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon, and a layer of amorphous p-type silicon disposed over the layer of intrinsic GaAs. The layer of intrinsic GaAs may be engineered by the disclosed methods to exhibit a variety of structural properties that enhance light absorption and charge carrier mobility, including oriented polycrystalline intrinsic GaAs, embedded particles of intrinsic GaAs, and textured surfaces. Also provided are devices incorporating the PIN structures, including photovoltaic devices.

Claims (32)

1. A PIN structure comprising:

(a) a layer of amorphous n-type silicon;

(b) a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon; and

(c) a layer of amorphous p-type silicon disposed over the layer of intrinsic GaAs,

wherein the layer of intrinsic GaAs comprises intrinsic GaAs particles embedded within the layer.

2. The PIN structure of claim 1 , wherein the layer of intrinsic GaAs comprises non-oriented polycrystalline intrinsic GaAs.

3. The PIN structure of claim 1 , wherein the layer of intrinsic GaAs comprises oriented polycrystalline intrinsic GaAs.

4. The PIN structure of claim 1 , wherein the intrinsic GaAs particles are characterized by a maximum dimension of about 100 nm or greater.

5. The PIN structure of claim 1 , wherein a surface of the layer of intrinsic GaAs comprises a random distribution of protrusions projecting away from the surface of the layer.

6. The PIN structure of claim 5 , wherein the layer of intrinsic GaAs comprises non-oriented polycrystalline intrinsic GaAs.

7. The PIN structure of claim 1 , wherein the layer of intrinsic GaAs comprises oriented polycrystalline intrinsic GaAs, and further wherein a surface of the layer of intrinsic GaAs comprises a random distribution of protrusions projecting away from the surface of the layer.

8. The PIN structure of claim 1 , wherein the layer of intrinsic GaAs comprises metallic particles embedded within the layer, the metallic particles comprising one or more noble metals.

9. A photovoltaic device comprising:

(a) a PIN structure comprising:

(i) a layer of amorphous n-type silicon;

(ii) a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon; and

(iii) a layer of amorphous p-type silicon disposed over the layer of intrinsic GaAs;

(b) a first electrode in electrical contact with the layer of amorphous n-type silicon;

(c) a second electrode in electrical contact with the layer of amorphous p-type silicon; and

(d) a voltage source in electrical contact with the first and second electrodes,

wherein the layer of intrinsic GaAs comprises intrinsic GaAs particles embedded within the layer.

10. The photovoltaic device of claim 9 , wherein the layer of intrinsic GaAs comprises oriented polycrystalline intrinsic GaAs.

11. The photovoltaic device of claim 9 , further wherein a surface of the layer of intrinsic GaAs comprises a random distribution of protrusions projecting away from the surface of the layer.

12. The photovoltaic device of claim 9 , wherein the layer of intrinsic GaAs comprises non-oriented polycrystalline intrinsic GaAs.

13. The photovoltaic device of claim 9 , wherein the intrinsic GaAs particles are characterized by a maximum dimension of about 100 nm or greater.

14. The photovoltaic device of claim 11 , wherein the layer of intrinsic GaAs comprises non-oriented polycrystalline intrinsic GaAs.

15. The photovoltaic device of claim 9 , wherein the layer of intrinsic GaAs comprises oriented polycrystalline intrinsic GaAs, and further wherein a surface of the layer of intrinsic GaAs comprises a random distribution of protrusions projecting away from the surface of the layer.

16. The photovoltaic device of claim 9 , wherein the layer of intrinsic GaAs comprises metallic particles embedded within the layer, the metallic particles comprising one or more noble metals.

17. The PIN structure of claim 1 , wherein the average size of the intrinsic GaAs particles is greater than the average size of crystal grains within the layer of intrinsic GaAs.

18. The photovoltaic device of claim 9 , wherein the average size of the intrinsic GaAs particles is greater than the average size of crystal grains within the layer of intrinsic GaAs.

19. The PIN structure of claim 1 , wherein the areal density of the intrinsic GaAs particles is about 5×10 4 cm −2 or greater.

20. The photovoltaic device of claim 9 , wherein the areal density of the intrinsic GaAs particles is about 5×10 4 cm −2 or greater.

Continuity (2)
Provisional Application 61455286 · Oct 18, 2010
Related Publication 20110175085A1 · Jul 21, 2011