Transverse scanning bone densitometer and detector used in same
A scanning bone densitometer includes an x-ray source to produce x-rays and an x-ray detector receiving x-rays emitted from the x-ray source. The x-ray detector includes a cadmium tellurium (CdTe) semiconductor. The scanning bone densitometer also includes a controller moving the x-ray source and the x-ray detector along a transverse scanning path to acquire a plurality of scan images of an object of interest.
1. A scanning bone densitometer comprising:
an x-ray source configured to produce x-rays;
an x-ray detector configured to receive x-rays emitted from the x-ray source, the x-ray detector including a cadmium tellurium (CdTe) semiconductor detector element, wherein the CdTe semiconductor detector element comprises an anode and a cathode, the anode comprising at least one of an indium material or an aluminum material and the cathode comprising a platinum material; and
a controller configured to move the x-ray source and the x-ray detector along a transverse scanning path to acquire a plurality of scan images of an object of interest, wherein the transverse scanning path comprises a first path transverse to a longitudinal axis of the object of interest, a second path parallel to the longitudinal axis of the object of interest, and the transverse scanning path repeatedly alternates between the first and second paths.
2. The scanning bone densitometer of claim 1 wherein the x-ray source comprises a dual-energy x-ray source.
3. The scanning bone densitometer of claim 1 wherein the x-ray detector comprises a plurality of CdTe semiconductor detector elements, each CdTe semiconductor detector element comprising a photon-counting element.
4. The scanning bone densitometer of claim 1 wherein the x-ray detector comprises a plurality of CdTe semiconductor detector elements, each CdTe semiconductor detector element comprising a Schottky contact.
5. The scanning bone densitometer of claim 1 wherein the x-ray detector comprises a plurality of CdTe semiconductor detector elements.
6. The scanning bone densitometer of claim 1 wherein the x-ray detector comprises a plurality of linear CdTe semiconductor detector arrays arranged in a staggered arrangement.
7. The scanning bone densitometer of claim 1 wherein the x-ray detector comprises a plurality of CdTe semiconductor detector elements arranged to form a linear detector array.
8. The scanning bone densitometer of claim 1 wherein the x-ray detector comprises a plurality of CdTe semiconductor detector elements, each CdTe semiconductor detector element being separated from an adjacent CdTe semiconductor detector element by a gap.
9. The scanning bone densitometer of claim 1 wherein the x-ray detector comprises sixteen CdTe semiconductor detector elements, each CdTe semiconductor detector element comprising a current blocking contact.
10. The scanning bone densitometer of claim 1 further comprising a computer programmed to:
acquire information from a dual-energy x-ray scan of a subject; and
generate a dual-energy image of the subject using the acquired information.
11. An x-ray detector comprising:
a cathode;
an anode; and
a cadmium tellurium (CdTe) semiconductor detector element disposed between the cathode and the anode, the CdTe semiconductor detector element is configured to convert x-rays emitted from a dual-energy transverse scanning x-ray source into a current that is proportional to the x-ray energy, and the anode comprises at least one of an indium material or an aluminum material and the cathode comprises a platinum material.
12. The x-ray detector in accordance with claim 11 wherein the x-ray detector further comprises a plurality of CdTe semiconductor detector elements arranged to form a linear x-ray detector array.
13. The x-ray detector in accordance with claim 11 wherein the x-ray detector further comprises a plurality of CdTe semiconductor detector elements, each CdTe semiconductor detector element having a photon-counting element.
14. The x-ray detector in accordance with claim 11 wherein the x-ray detector further comprises a plurality of CdTe semiconductor detector elements arranged in a staggered pattern.
15. The x-ray detector in accordance with claim 11 wherein the x-ray detector further comprises a plurality of CdTe semiconductor detector elements and a Schottky contact formed on each semiconductor detector element.
16. The x-ray detector in accordance with claim 11 wherein the anode comprises a Schottky contact.
17. The x-ray detector in accordance with claim 11 wherein the x-ray detector further comprises a plurality of CdTe semiconductor detector elements, and a portion of the CdTe semiconductor detector elements are separated by a gap.
18. A method of fabricating a dual-energy system x-ray detector, said method comprising:
depositing a platinum cathode on a first surface of a cadmium tellurium (CdTe) semiconductor detector element that is configured to convert x-rays emitted from a dual-energy transverse scanning x-ray source into a current that is proportional to the x-ray energy; and
depositing at least one of an indium Schottky contact or an aluminum Schottky contact on an opposite surface of the CdTe semiconductor detector element.
19. A method in accordance with claim 18 further comprising arranging a plurality of CdTe semiconductor detector elements to form at least one each of a linear detector array and a staggered detector array.
20. A scanning bone densitometer comprising:
an x-ray source configured to produce x-rays; and
an x-ray detector configured to receive x-rays emitted from the x-ray source, the x-ray detector including a cadmium tellurium (CdTe) semiconductor detector element, wherein the CdTe semiconductor detector element comprises an anode and a cathode, the anode comprising at least one of an indium material or an aluminum material and the cathode comprising a platinum material.