IP Library › Granted Patent US 8,169,036
Granted Patent B2
US 8,169,036 · App. 13/225,401 · Granted May 1, 2012

Semiconductor integrated circuit device

Assignee: Renesas Electronics Corporation
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Quick Facts
Patent No.
US 8,169,036
App. No.
13/225,401
Granted
May 1, 2012
Kind
B2
Abstract

A semiconductor integrated circuit device having a control signal system for avoiding failure to check an indefinite signal propagation prevention circuit, for facilitating a check included in an automated tool, and for facilitating a power shutdown control inside a chip. In the semiconductor integrated circuit device, power shutdown priorities are provided by independent power domains (Area A to Area I). A method for preventing a power domain having a lower priority from being turned OFF when a circuit having a high priority is turned ON is also provided.

Claims (4)

1. A semiconductor integrated circuit device, said device comprising:

a power switch composed of a second gate insulating film thickness which is greater than a gate insulating film thickness of a first MISFET that configures a logic circuit; and

a power switch controller composed of a MISFET having the second gate insulating film thickness,

wherein the power switch controller carries out drive control of a large sized third power switch by switching a plurality of large and small driving drivers, and monitors a voltage level of a signal at a distal end of a control signal of the third power switch, thereby carrying out switch control of a driving driver size of the third power switch.

Assignments (1)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
Priority Claims (1)
JP 2005-166714 · Jun 7, 2005 · national
Continuity (3)
Division 12566323 · Sep 24, 2009
Division 11447168 · Jun 6, 2006
Related Publication 20110316620A1 · Dec 29, 2011