Semiconductor device and method of manufacturing the semiconductor device
View Patent ↗An object is to provide a semiconductor device provided with a thin film transistor having excellent electric characteristics using an oxide semiconductor layer. An In—Sn—O-based oxide semiconductor layer including SiO X is used for a channel formation region. In order to reduce contact resistance between the In—Sn—O-based oxide semiconductor layer including SiO X and a wiring layer formed from a metal material having low electric resistance, a source region or drain region is formed between a source electrode layer or drain electrode layer and the In—Sn—O-based oxide semiconductor layer including SiO X . The source region or drain region and a pixel region are formed using an In—Sn—O-based oxide semiconductor layer which does not include SiO X .
1. A semiconductor device comprising:
a gate electrode layer;
a gate insulating layer;
a first oxide semiconductor layer including In, Sn, and SiO x ;
a source region and a drain region which are in contact with the first oxide semiconductor layer; and
a pixel electrode,
wherein the source region or the drain region and the pixel electrode are formed from a second oxide semiconductor layer including In, Sn, and O.
2. A semiconductor device according to claim 1 , wherein conductivity of the first oxide semiconductor layer is less than or equal to 1.6×10 −3 S/cm.
3. A semiconductor device according to claim 1 , wherein the first oxide semiconductor layer is amorphous.
4. A semiconductor device according to claim 1 , wherein the first oxide semiconductor layer is formed by a sputtering method using an oxide semiconductor target including In, Sn, Si and O where a concentration of SiO 2 is 5 wt % or higher and 50 wt % or lower.
5. A semiconductor device according to claim 1 , further comprising a liquid crystal layer interposed between the pixel electrode and a counter electrode.
6. A semiconductor device according to claim 1 , further comprising a light-emitting layer provided over an anode provided in the pixel electrode, and a cathode provided over the light-emitting layer.
7. A semiconductor device according to claim 1 , further comprising a light-emitting layer provided over a cathode provided in the pixel electrode, and an anode provided over the light-emitting layer.
8. A semiconductor device according to claim 1 , wherein nitrogen is added to the second oxide semiconductor layer.
9. A semiconductor device according to claim 1 , wherein a channel region is provided in the first oxide semiconductor layer.
10. A semiconductor device comprising:
a gate electrode layer over a substrate having an insulating surface;
a gate insulating layer over the gate electrode layer;
a first oxide semiconductor layer including In, Sn, and SiO x over the gate insulating layer;
a source region and a drain region which are in contact with the first oxide semiconductor layer; and
a pixel electrode,
wherein the source region or the drain region and the pixel electrode are formed from a second oxide semiconductor layer including In, Sn, and O.
11. A semiconductor device according to claim 10 , wherein conductivity of the first oxide semiconductor layer is less than or equal to 1.6×10 −3 S/cm.
12. A semiconductor device according to claim 10 , wherein the first oxide semiconductor layer is amorphous.
13. A semiconductor device according to claim 10 , wherein the first oxide semiconductor layer is formed by a sputtering method using an oxide semiconductor target including In, Sn, Si and O where a concentration of SiO 2 is 5 wt % or higher and 50 wt % or lower.
14. A semiconductor device according to claim 10 , further comprising a liquid crystal layer interposed between the pixel electrode and a counter electrode.
15. A semiconductor device according to claim 10 , further comprising a light-emitting layer provided over an anode provided in the pixel electrode, and a cathode provided over the light-emitting layer.
16. A semiconductor device according to claim 10 , further comprising a light-emitting layer provided over a cathode provided in the pixel electrode, and an anode provided over the light-emitting layer.
17. A semiconductor device according to claim 10 , wherein nitrogen is added to the second oxide semiconductor layer.
18. A semiconductor device according to claim 10 , wherein a channel region is provided in the first oxide semiconductor layer.