Semiconductor device and method of fabricating the same
View Patent ↗An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.
1. A semiconductor device comprising:
a gate electrode and a source wiring formed over an insulating surface;
a first insulating film formed over the gate electrode and the source wiring;
a semiconductor film formed over the first insulating film; wherein the semiconductor film comprising a channel region, a source region and a drain region,
a source electrode formed over the first insulating film; and
a first electrode formed over the first insulating film;
a second insulating film formed over the first electrode;
a pixel electrode formed over the first insulating film;
a second electrode formed over the second insulating film;
wherein the source electrode is electrically connected to the source region and wherein the source electrode is electrically connected to the source wiring through at least an opening in the first insulating film, and
wherein the pixel electrode is electrically connected to the drain region,
wherein the second electrode is electrically connected to the drain region,
wherein the first electrode is overlapped with the second electrode.
2. A semiconductor device according to claim 1 ,
wherein the gate electrode and the source wiring contains a same material.
3. A semiconductor device according to claim 1 ,
wherein a portion of the pixel electrode is overlapped with the source wiring.
4. A semiconductor device according to claim 1 , wherein the first insulating film includes at least silicon nitride.
5. A semiconductor device according to claim 1 , further comprising a liquid crystal layer over the pixel electrode.
6. A semiconductor device according to claim 1 , further comprising an organic light-emitting layer over the pixel electrode.
7. A semiconductor device according to claim 1 , wherein the pixel electrode has a conducting layer comprising aluminum or silver as a main component of a surface.
8. A semiconductor device according to claim 1 , wherein a gate wiring formed over the insulating film is electrically connected to the gate electrode.
9. A semiconductor device according to claim 8 , wherein the gate wiring covers the semiconductor film to function as a light-shielding film to the semiconductor film.
10. A semiconductor device according to claim 1 ,
wherein the source region and the drain region are formed to introduce an impurity to the semiconductor film.
11. A semiconductor device according to claim 1 ,
wherein the second electrode and the pixel electrode contain a same material.
12. A semiconductor device comprising:
a gate electrode and a source wiring formed over an insulating surface;
an insulating film formed over the gate electrode and the source wiring;
a semiconductor film formed over the insulating film; wherein the semiconductor film comprising a channel region, a source region and a drain region,
a source electrode formed over the insulating film;
a pixel electrode formed over the insulating film; and
a gate wiring formed over the insulating film;
wherein the source electrode is electrically connected to the source region;
wherein the source electrode is electrically connected to the source wiring through at least an opening in the insulating film,
wherein the pixel electrode is electrically connected to the drain region, and
wherein the gate wiring is electrically connected to the gate electrode.
13. A semiconductor device according to claim 12 ,
wherein the gate electrode and the source wiring contains a same material.
14. A semiconductor device according to claim 12 ,
wherein a portion of the pixel electrode is overlapped with the source wiring.
15. A semiconductor device according to claim 12 , wherein the insulating film includes at least silicon nitride.
16. A semiconductor device according to claim 12 , further comprising a liquid crystal layer over the pixel electrode.
17. A semiconductor device according to claim 12 , further comprising an organic light-emitting layer over the pixel electrode.
18. A semiconductor device according to claim 12 , wherein the pixel electrode has a conducting layer comprising aluminum or silver as a main component of a surface.
19. A semiconductor device according to claim 12 , wherein the gate wiring covers the semiconductor film to function as a light-shielding film to the semiconductor film.
20. A semiconductor device according to claim 12 ,
wherein the source region and the drain region are formed to introduce an impurity to the semiconductor film.
21. A semiconductor device according to claim 12 ,
wherein the gate wiring is overlapped with the source wiring.
22. A semiconductor device comprising:
a gate electrode, a source wiring and a first electrode formed over an insulating surface;
an insulating film formed over the gate electrode, the source wiring and the first electrode;
a semiconductor film formed over the insulating film; wherein the semiconductor film comprising a channel region, a source region and a drain region,
a second electrode formed over the insulating film;
a source electrode formed over the insulating film; and
a pixel electrode formed over the insulating film;
wherein the source electrode is electrically connected to the source region;
wherein the source electrode is electrically connected to the source wiring through at least an opening in the insulating film,
wherein the pixel electrode is electrically connected to the drain region,
wherein the second electrode is electrically connected to the drain region, and
wherein the first electrode is overlapped with the second capacitor electrode to form a capacitor.
23. A semiconductor device according to claim 22 , wherein the gate electrode, the source wiring and the first capacitor electrode contain a same material.
24. A semiconductor device according to claim 22 , wherein a portion of the pixel electrode is overlapped with the source wiring.
25. A semiconductor device according to claim 22 , wherein the insulating film includes at least silicon nitride.
26. A semiconductor device according to claim 22 , further comprising a liquid crystal layer over the pixel electrode.
27. A semiconductor device according to claim 22 , further comprising an organic light-emitting layer over the pixel electrode.
28. A semiconductor device according to claim 22 , wherein the pixel electrode has a conducting layer comprising aluminum or silver as a main component of a surface.
29. A semiconductor device according to claim 22 , wherein a gate wiring formed over the insulating film is electrically connected to the gate electrode.
30. A semiconductor device according to claim 29 , wherein the gate wiring covers the semiconductor film to function as a light-shielding film to the semiconductor film.
31. A semiconductor device according to claim 22 ,
wherein the source region and the drain region are formed to introduce an impurity to the semiconductor film.