Multi-layered LED epitaxial structure with light emitting unit
A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the first surface of the light emitting unit; and (g) removing a portion of the light emitting unit from the first surface, to expose at least one of the n-electrode and the p-electrode.
1. A semiconductor light emitting device, comprising:
a permanent substrate;
a multi-layered LED epitaxial structure formed on the permanent substrate and having at least one light emitting unit that comprises an n-type layer, an active region, and a p-type layer;
an n-electrode coupled to the n-type layer and positioned between the permanent substrate and the light emitting unit;
a p-electrode coupled to the p-type layer and positioned between the permanent substrate and the light emitting unit; and
at least one trench in the light emitting unit that exposes at least one of the n-electrode or the p-electrode.
2. The semiconductor light emitting device of claim 1 , wherein the permanent substrate comprises a reflecting layer and a base, and wherein the reflecting layer is positioned between the base and the multi-layered LED epitaxial structure.
3. The semiconductor light emitting device of claim 1 , wherein the at least one trench comprises a trench through at least a portion of the light emitting unit.
4. The semiconductor light emitting device of claim 1 , wherein the multi-layered LED epitaxial structure comprises a plurality of the light emitting units.
5. The semiconductor light emitting device of claim 4 , wherein the permanent substrate comprises a base, a reflecting layer the base, and an insulating layer on the reflecting layer opposite to the base, and wherein the insulating layer is adhered to the n-electrodes and the p-electrodes of the light emitting units to electrically isolate the n-electrodes from the p-electrodes.
6. The semiconductor light emitting device of claim 5 , further comprising a plurality of conductive films positioned over the n-electrodes and the p-electrodes of the light emitting units, wherein each of the conductive films electrically connects the n-electrode coupled to one of the light emitting units to the p-electrode coupled to an adjacent one of the light emitting units.
7. The semiconductor light emitting device of claim 4 , wherein the permanent substrate comprises a base, a reflecting layer on the base, a circuit layer on the reflecting layer opposite to the base that is adhered to and electrically interconnects the n-electrodes of the light emitting units, and an insulating layer between the circuit layer and the p-electrodes of the light emitting units to electrically isolate the n-electrodes from the p-electrodes.
8. The semiconductor light emitting device of claim 7 , further comprising a plurality of conductive films positioned over the n-electrodes of the light emitting units, wherein each of the conductive films electrically connects the n-electrode coupled to one of the light emitting units to the n-electrode coupled to an adjacent one of the light emitting units.
9. The semiconductor light emitting device of claim 7 , further comprising a plurality of conductive films positioned over the n-electrodes and the p-electrodes of the light emitting units, wherein each of the conductive films electrically connects the n-electrode coupled to one of the light emitting units to the p-electrode coupled to an adjacent one of the light emitting units.