Methods for fabricating group III nitride structures with a cluster tool

1. A method for fabricating a compound nitride structure, comprising:

forming a group III nitride layer on each of two or more substrates disposed in a first processing chamber, wherein forming the group III nitride layer comprises:

flowing a reactive gas comprising chlorine gas over a hydride vapor phase epitaxial (HVPE) precursor source to form a first reaction product comprising gallium chloride or aluminum chloride; and

flowing the formed first reaction product to the two or more substrates disposed in the first processing chamber;

transferring the two or more substrates from the first processing chamber to a second processing chamber in a first controlled environment;

forming a ternary group III nitride layer over the group III nitride layer in the second processing chamber;

transferring the two or more substrates from the second processing chamber to a third processing chamber in a second controlled environment; and

forming a first doped group III nitride layer over the ternary group III nitride layer in the third processing chamber.

2. The method of claim 1 , further comprising forming a second doped group III nitride layer on the first doped group III nitride layer.

3. The method of claim 2 , wherein the second doped group III nitride layer is formed over the first doped group III nitride layer in the third processing chamber.

4. The method of claim 1 , wherein the group III nitride layer formed on the two or more substrates in the first processing chamber comprises a third doped group III nitride layer.

5. The method of claim 1 , wherein

the HVPE precursor source comprises gallium in liquid form or aluminum in solid, powder form.

6. A method for fabricating a compound nitride structure, comprising:

heating two or more substrates disposed in a first processing chamber while flowing a pretreatment gas mixture comprising ammonia and a halogen gas to the two or more substrates during a pretreatment process;

forming a group III nitride layer on each of the two or more substrates disposed in the first processing chamber, wherein forming the group III nitride layer comprises:

flowing a reactive gas comprising chlorine gas over a hydride vapor phase epitaxial (HVPE) precursor source to form a first reaction product comprising gallium chloride or aluminum chloride; and

flowing the formed first reaction product to the two or more substrates disposed in the first processing chamber;

transferring the two or more substrates from the first processing chamber to a second processing chamber in a first controlled environment;

forming a ternary group III nitride layer over the group III nitride layer in the second processing chamber;

transferring the two or more substrates from the second processing chamber to a third processing chamber in a second controlled environment;

forming a first doped group III nitride layer over the ternary group III nitride layer in the third processing chamber; and

forming a second doped group III nitride layer on the first doped group III nitride layer.

7. The method of claim 6 , wherein the halogen gas comprises fluorine gas or chlorine gas.

8. The method of claim 6 , wherein the group III nitride layer formed on the two or more substrates in the first processing chamber comprises an n-doped group III nitride layer.

9. The method of claim 6 , wherein

the HVPE precursor source comprises gallium in liquid form or aluminum in solid, powder form.

10. A method for fabricating a compound nitride structure, comprising:

forming a gallium nitride layer on each of two or more substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process;

transferring the two or more substrates to a second processing chamber;

forming an InGaN layer on the gallium nitride layer within the second processing chamber by a first metal organic chemical vapor deposition (MOCVD) process;

transferring the two or more substrates to a third processing chamber;

forming a p-doped AlGaN layer on the InGaN layers within the third processing chamber by a second MOCVD process; and

forming a p-doped GaN layer on the p-doped AlGaN layer by a third MOCVD process.

11. The method of claim 10 , wherein forming the InGaN layer comprises flowing two or more process gases through a gas distribution device into a process volume of the second processing chamber to deposit one or more films on the two or more substrates.

12. The method of claim 11 , wherein forming the InGaN layer further comprises:

heating the two or more substrates using a heat source having an array of lamps arranged to form a plurality of concentric heat zones.

13. A method for fabricating a compound nitride semiconductor structure, comprising:

heating two or more substrates while flowing a gas mixture comprising ammonia and a carrier gas to the two or more substrates;

flowing a first gallium containing reaction product and a first nitrogen containing precursor to the two or more substrates disposed in a hydride vapor phase epitaxial (HVPE) chamber to form a gallium nitride layer thereon, wherein the first gallium containing reaction product is formed by:

flowing a reactive gas comprising chlorine over a HVPE precursor source, wherein the first gallium containing reaction product comprises gallium chloride;

removing the two or more substrates from the HVPE chamber and into a first controlled environment;

transferring the two or more substrates from the first controlled environment and into a first metal organic chemical vapor deposition (MOCVD) chamber;

flowing a first gallium containing precursor, an indium containing precursor, and a second nitrogen containing precursor into the first MOCVD processing chamber to form an InGaN layer over the gallium nitride layer;

removing the two or more substrates from the first MOCVD chamber and into a second controlled environment;

transferring the two or more substrates from the second controlled environment and into a second MOCVD chamber; and

flowing a second gallium containing precursor, an aluminum containing precursor, and a third nitrogen containing precursor into the second MOCVD processing chamber to form an AlGaN layer over the InGaN layer.

14. The method of claim 13 , wherein forming the InGaN layer comprises flowing two or more process gases through a gas distribution device into a process volume of the second processing chamber to deposit one or more films on each of the two or more substrates.

15. The method of claim 14 , wherein forming the InGaN layer further comprises:

heating the two or more substrates using a heat source having an array of lamps arranged to form a plurality of concentric heat zones.

16. A method for fabricating a compound nitride structure, comprising:

forming a group III nitride layer on each of two or more substrates disposed in a first processing chamber, wherein forming the group III nitride layer comprises:

flowing a reactive gas comprising chlorine gas over a hydride vapor phase epitaxial (HVPE) precursor source to form a first reaction product comprising gallium chloride or aluminum chloride; and

flowing the formed first reaction product to the two or more substrates disposed in the first processing chamber;

transferring the two or more substrates from the first processing chamber to a second processing chamber in a first controlled environment;

forming a ternary group III nitride layer over the group III nitride layer in the second processing chamber;

transferring the two or more substrates from the second processing chamber to a third processing chamber in a second controlled environment;

forming a first doped group III nitride layer over the ternary group III nitride layer in the third processing chamber;

transferring the two or more substrates from the third processing chamber to a fourth processing chamber in a third controlled environment; and

forming a second doped group III nitride layer on the first doped group III nitride layer in the fourth processing chamber.

17. The method of claim 16 , wherein the group III nitride layer formed on the two or more substrates in the first processing chamber comprises an n-doped group III nitride layer.

18. The method of claim 16 , further comprising:

heating the two or more substrates while flowing a pretreatment gas mixture comprising ammonia and a halogen gas to the two or more substrates during a pretreatment process before forming the group III nitride layer on the two or more substrates.

19. The method of claim 16 , wherein

the HVPE precursor source comprises gallium in liquid form or aluminum in solid, powder form.

20. A method for fabricating a compound nitride structure, comprising:

forming a gallium nitride layer on each of the two or more substrates disposed in the first processing chamber, wherein forming the gallium nitride layer comprises:

flowing a reactive gas comprising chlorine gas over a hydride vapor phase epitaxial precursor source to form a first reaction product comprising gallium chloride; and

flowing the formed first reaction product to the two or more substrates disposed in the first processing chamber;

forming a ternary group III nitride layer on two or more substrates disposed in a second processing chamber;

transferring the two or more substrates from the second processing chamber to a third processing chamber in a controlled environment;

forming a first doped group III nitride layer over the ternary group III nitride layer in the third processing chamber; and

forming a second doped group III nitride layer on the first doped group III nitride layer.

21. The method of claim 20 , wherein the second doped group III nitride layer is formed over the first doped group III nitride layer in the third processing chamber.

22. A method for fabricating a compound nitride structure, comprising:

heating two or more substrates while flowing a pretreatment gas mixture comprising ammonia and a halogen gas to the two or more substrates disposed in a first processing chamber during a pretreatment process;

forming a gallium nitride layer on each of the two or more substrates disposed in the first processing chamber, wherein forming the gallium nitride layer comprises:

flowing a reactive gas comprising chlorine gas over a hydride vapor phase epitaxial precursor source to form a first reaction product comprising gallium chloride; and

flowing the formed first reaction product to the two or more substrates disposed in the first processing chamber;

transferring the two or more substrates from the first processing chamber to a second processing chamber in a first controlled environment;

forming a ternary group III nitride layer over the gallium nitride layer in the second processing chamber;

transferring the two or more substrates from the second processing chamber to a third processing chamber in a second controlled environment; and

forming a first doped group III nitride layer over the ternary group III nitride layer in the third processing chamber.

23. The method of claim 22 , wherein the first doped group III nitride layer comprises aluminum, gallium, and nitrogen.