IP Library Granted Patent US 8,183,668
Granted Patent B2
US 8,183,668 · App. 12/788,455 · Granted May 22, 2012

Gallium nitride substrate

Assignee: Sumitomo Electric Industries, Ltd.
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Quick Facts
Patent No.
US 8,183,668
App. No.
12/788,455
Granted
May 22, 2012
Kind
B2
Abstract

A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 20 to 160 degrees with respect to a C-plane of the substrate, and the substrate having a fracture toughness of more than or equal to 1.36 MN/m 3/2 .

Claims (9)

1. A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 20 to 160 degrees with respect to a C-plane of the substrate, and the substrate having a fracture toughness of more than or equal to 1.36 MN/m 3/2 , further comprising a cleaved surface that extends in a direction perpendicular to a [11-20] direction.

2. The gallium nitride substrate according to claim 1 , wherein the primary surface is tilted in a [1-100] direction of the substrate.

3. The gallium nitride substrate according to claim 2 , wherein the primary surface has a longitudinal direction being a [11-20] direction of the substrate and a transverse direction perpendicular to the [11-20] direction.

4. The gallium nitride substrate according to claim 2 , wherein the angle between the primary surface and the C-plane is in a range of 71 to 79 degrees.

5. A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 20 to 160 degrees with respect to a C-plane of the substrate, the substrate having a fracture toughness of more than or equal to 1.36 MN/m 3/2 , the primary surface having a longitudinal direction and a transverse direction, the longitudinal direction being a [11-20] direction of the substrate, and the transverse direction being perpendicular to the [11-20] direction further comprising a cleaved surface that extends in a direction perpendicular to a [11-20] direction.

6. The gallium nitride substrate according to claim 5 , wherein the angle between the primary surface and the C-plane is in a range of 71 to 79 degrees.

7. A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 71 to 79 degrees with respect to a C-plane of the substrate, the substrate having a fracture toughness of more than or equal to 1.36 MN/m 3/2 , further comprising a cleaved surface that extends in a direction perpendicular to a [11-20] direction.

8. A gallium nitride substrate comprising a primary surface and a cleaved surface that extends in a direction perpendicular to the [11-20] direction, the primary surface being tilted at an angle in a range of 20 to 160 degrees with respect to a C-plane of the substrate, the substrate having a fracture toughness of more than or equal to 1.36 MN/m 3/2 .

9. A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 71 to 79 degrees with respect to a C-plane of the substrate, and the substrate having a fracture toughness of more than or equal to 1.36 MN/m 3/2 , the primary surface having a longitudinal direction and a transverse direction, the longitudinal direction being a [11-20] direction of the substrate, and the transverse direction being perpendicular to the [11-20]direction, further comprising a cleaved surface that extends in a direction perpendicular to a [11-20] direction.

Assignments (2)
NUNC PRO TUNC ASSIGNMENT Recorded Dec 7, 2023
From: SUMITOMO ELECTRIC INDUSTRIES, LTD.
To: MITSUBISHI CHEMICAL CORPORATION
Reel/Frame 065817/0967 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2010
From: HACHIGO, AKIHIRO
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 024624/0364 →
Priority Claims (1)
JP P2009-227768 · Sep 30, 2009 · national
Continuity (1)
Related Publication 20110073871A1 · Mar 31, 2011