Optical sensor and solid-state imaging device
A solid-state imaging device includes a plurality of pixels stored in one-dimensional or two-dimensional array, each of the plurality of pixels including a photodiode receiving light and producing photocharges, an overflow gate coupled to the photodiode and transferring photocharges that overflow the photodiode during a storage operation, and a storage capacitor element that stores the photocharges transferred by the overflow gate during the storage operation.
1. A solid-state imaging device comprising a plurality of pixels,
wherein each two or more pixels commonly comprises a floating region and each one of said plurality of pixels comprises:
a photodiode receiving light and producing and storing photocharges;
a transfer transistor that is coupled between said photodiode and said floating region and transfers photocharges stored in said photodiode to said floating region;
a storage capacitor element;
a storage transistor provided, separately from said transfer transistor, between said floating region and said storage capacitor element; and
an overflow gate provided, separately from said transfer transistor and also separately from said storage transistor, between said photodiode and the connection of said storage capacitor element and said storage transistor, said overflow gate being directly coupled to said photodiode, and wherein said overflow gate is coupled to said storage capacitor element separately from said storage transfer transistor,
and wherein in a storage period of said photodiode, said overflow gate transfers photocharges overflowed from said photodiode to said storage capacitor element, without passing through said floating region, and allows said storage capacitor element to store the overflowed photocharges,
wherein:
during a transfer period following a storage period of said photodiode, said transfer transistor is turned on to transfer charges stored in said photodiode to said floating region to allow said floating region to store the charges; and
during a mixing period after said transfer period, said storage transistor is turned on to mix charges stored in said storage capacitor element and charges stored in said floating region; and wherein:
before said mixing period the charges stored in said floating region are read out and after said mixing period said mixed charges are read out.
2. The solid-state imaging device claimed in claim 1 , further comprising an amplification transistor coupled to said floating region; wherein:
when said storage transistor is turned off, said amplification transistor amplifies and transforms charges stored in said floating region to a voltage signal; and then
when said storage transistor is turned on, said amplification transistor amplifies and transforms mixed charges.
3. The solid-state imaging device claimed in claim 2 , further comprising a reset transistor, wherein:
when said storage transistor is turned off, said reset transistor discharges charges from said floating region; and
when said storage transistor is turned on, said reset transistor discharges charges from said floating region and said storage capacitor element.
4. The solid-state imaging device claimed in claim 3 , wherein:
when said storage transistor is turned off, said floating region is discharged and noise charges are read from said floating region; and
when said storage transistor is turned on, said floating region and said storage capacitor element are discharged and noise charges are read from said floating region and said storage capacitor element.
5. A solid-state imaging device comprising a plurality of pixels,
wherein each two or more pixels commonly comprises a floating region and each one of said plurality of pixels comprises:
a photodiode receiving light and producing and storing photocharges;
a transfer transistor that is coupled between said photodiode and said floating region and transfers photocharges stored in said photodiode to said floating region;
a storage capacitor element;
a storage transistor provided, separately from said transfer transistor, between said floating region and said storage capacitor element; and
an overflow gate provided, separately from said transfer transistor and also separately from said storage transistor, between said photodiode and the connection of said storage capacitor element and said storage transistor, said overflow gate being directly coupled to said photodiode, and wherein said overflow gate is coupled to said storage capacitor element separately from said storage transfer transistor,
and wherein in a storage period of said photodiode, said overflow gate transfers photocharges overflowed from said photodiode to said storage capacitor element, without passing through said floating region, and allows said storage capacitor element to store the overflowed photocharges,
wherein:
during a transfer period following a storage period of said photodiode, said transfer transistor is turned on to transfer charges stored in said photodiode to said floating region to allow said floating region to store the charges; and
during a mixing period after said transfer period, said storage transistor and said transfer transistor are turned on to mix charges stored in said storage capacitor element and charges stored in said photodiode in said floating region; and wherein:
before said mixing period the charges stored in said floating region are read out and after said mixing period said mixed charges are read out.
6. A solid-state imaging device comprising a plurality of pixels,
wherein each two or more pixels commonly comprises a floating region and each one of said plurality of pixels comprises:
a photodiode receiving light and producing and storing photocharges;
a transfer transistor that is coupled between said photodiode and said floating region and transfers photocharges stored in said photodiode to said floating region;
a storage capacitor element;
a storage transistor provided, separately from said transfer transistor, between said floating region and said storage capacitor element; and
an overflow gate provided, separately from said transfer transistor and also separately from said storage transistor, between said photodiode and the connection of said storage capacitor element and said storage transistor, said overflow gate being directly coupled to said photodiode, and wherein said overflow gate is coupled to said storage capacitor element separately from said storage transfer transistor,
and wherein in a storage period of said photodiode, said overflow gate transfers photocharges overflowed from said photodiode to said storage capacitor element, without passing through said floating region, and allows said storage capacitor element to store the overflowed photocharges,
wherein:
during a transfer period following a storage period of said photodiode, said transfer transistor is turned on to transfer charges stored in said photodiode to said floating region to allow said floating region to store the charges; and
during a mixing period after said transfer period, said storage transistor is turned on to mix charges stored in said storage capacitor element and charges stored in said floating region; and wherein:
before said mixing period the charges stored in said floating region are read out and after said mixing period said mixed charges are read out as signal charges.