IP Library › Granted Patent US 8,185,855
Granted Patent B2
US 8,185,855 · App. 12/461,301 · Granted May 22, 2012

Capacitor-cell, integrated circuit, and designing and manufacturing methods

Assignee: Fujitsu Limited
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Quick Facts
Patent No.
US 8,185,855
App. No.
12/461,301
Granted
May 22, 2012
Kind
B2
Abstract

A capacitor-cell is in an integrated circuit that is configured by disposing a plurality of cells on a site that is on a chip and that is provided between a power line and a grounding line in a direction of the power line and grounding line. The capacitor cell is disposed in a remaining region on the site, after the plurality of cells are disposed on the site. The capacitor-cell includes a gate poly for accumulating capacitance extending up to at least one of positions of the power line and the grounding line in a planar quadrangular cell-frame that is set for disposing the plurality of cells on the site.

Claims (18)

1. A capacitor-cell in an integrated circuit that is configured by disposing a plurality of cells on a site that is on a chip and that is provided between a power line and a grounding line in a direction of the power line and grounding line, wherein

the capacitor cell is disposed in a remaining region on the site, after the plurality of cells are disposed on the site,

the capacitor-cell comprises

a gate poly for accumulating capacitance extending up to a planar quadrangular cell-frame that is set for disposing the plurality of cells on the site and that is disposed on at least one of the power line and the grounding line; and

a diffusion region extending up to the position of the grounding line and connected to other diffusion region in a vertical direction perpendicular to the direction of the power line and grounding line, and

the gate poly includes a margin extending further from the position of the grounding line of the cell-frame by a predetermined length and overlapping the other diffusion region layer being adjacent to the diffusion region.

2. The capacitor-cell according to claim 1 , further comprising:

at least another one of the capacitor-cell coupled to the capacitor-cell in a vertical direction perpendicular to the direction of the power line and grounding line.

3. An integrated circuit comprising:

a capacitor-cell disposed in a remaining region on a site that is on a chip and that is provided between a power line and a grounding line in a direction of the power line and grounding line after a plurality of cells are disposed on the site, the capacitor-cell including a gate poly for accumulating capacitance extending up to a planar quadrangular cell-frame that is set for disposing the plurality of cells on the site and that is disposed on at least one of the power line and the grounding line; and a diffusion region extending up to the position of the grounding line and connected to other diffusion region in a vertical direction perpendicular to the direction of the power line and grounding line, and

the gate poly includes a margin extending further from the position of the grounding line of the cell-frame by a predetermined length and overlapping the other diffusion region layer being adjacent to the diffusion region.

4. A method of manufacturing an integrated circuit, comprising:

disposing a plurality of cells formed per processing function on a site that is a region on a chip and that is provided between a power line and a grounding line in a direction of the power line and grounding line;

disposing, in each remaining region on the site, a capacitor cell including a gate poly for accumulating capacitance extending up to a planar quadrangular cell-frame that is set for disposing the plurality of cells on the site and that is disposed on at least one of the power line and the grounding line; and a diffusion region extending up to the position of the grounding line and connected to other diffusion region in a vertical direction perpendicular to the direction of the power line and grounding line, and

the gate poly includes a margin extending further from the position of the grounding line of the cell-frame by a predetermined length and overlapping the other diffusion region layer being adjacent to the diffusion region.

5. A method of designing an integrated circuit configured by disposing a capacitor cell in each remaining region on a site that is a region on a chip and that is provided between a power line and a grounding line in a direction of the power line and grounding line, after a plurality of cells formed per processing function are disposed on the site, the method comprising:

designing to include in the capacitor cell a gate poly for accumulating capacitance extending up to a planar quadrangular cell-frame that is set for disposing the plurality of cells on the site and that is disposed on at least one of the power line and the grounding line; and a diffusion region extending up to the position of the grounding line and connected to other diffusion region in a vertical direction perpendicular to the direction of the power line and grounding line, using a microprocessor, and

the gate poly includes a margin extending further from the position of the grounding line of the cell-frame by a predetermined length and overlapping the other diffusion region layer being adjacent to the diffusion region.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 6, 2009
From: KANARI, KATSUNAO
To: FUJITSU LIMITED
Reel/Frame 023086/0243 →
Continuity (2)
Continuation PCTJP2007056968 · Mar 29, 2007
Related Publication 20090302422A1 · Dec 10, 2009