Method of removing resist and apparatus therefor
A resist removing device 1 functions to remove a resist from a substrate while preventing occurrence of popping phenomenon and at the same time attains reduction in cost of energy for the resist removing and has a simplified constitution. The resist removing device 1 is equipped with a chamber 2 for containing therein a substrate 16 (for example, a substrate having a high-doze ion implanted resist), and with a pressure below the atmospheric pressure, the chamber 2 is fed with ozone gas, unsaturated hydrocarbons and water vapor. The ozone gas may be an ultra-high concentrated ozone gas that is produced by subjecting an ozone containing gas to a liquefaction-separation with the aid of a vapor pressure difference and then vaporizing the liquefied ozone. For cleaning the substrate 16 thus treated, it is preferable to use ultra-pure water. The chamber 2 is equipped with a susceptor 15 for holding the substrate 16 . The susceptor 15 is heated to a temperature of 100° C. or below. An example of the means of heating the susceptor is a light source that emits infra-red rays.
1. A method of removing a resist from a substrate, comprising:
preparing a chamber;
putting the substrate into the chamber;
heating the substrate at about 100° C.;
feeding the chamber with unsaturated hydrocarbons by such an amount that an interior of the chamber has a pressure of approximately 350 Pa;
feeding the chamber with a concentrated ozone gas by such an amount that the interior of the chamber containing the unsaturated hydrocarbons has a pressure of approximately 700 Pa;
feeding the chamber with water vapor by such an amount that the interior of the chamber containing the unsaturated hydrocarbons and the concentrated ozone gas has a pressure of approximately 1500 Pa, wherein the heating step and the feeding steps result in removal of resist from the substrate;
stopping the feeding of the concentrated ozone gas into the chamber,
stopping the feeding of the unsaturated hydrocarbons into the chamber;
stopping the feeding of the water vapor into the chamber; and
cleaning the substrate by using pure water.
2. A method of removing a resist from a substrate as claimed in claim 1 , wherein the concentrated ozone gas is an ultra-high concentrated type with a concentration of approximately 100 vol %.
3. A method of removing a resist from a substrate as claimed in claim 2 , wherein the feeding of the water vapor into the chamber is carried out after about 1 minute when the interior of the chamber is at a pressure of 700 Pa.
4. A method of removing a resist from a substrate as claimed in claim 3 , wherein the stopping of the feeding of the ultra-high concentrated ozone gas into the chamber is carried out after about 4 minutes when the interior of the chamber is at a pressure of 1500 Pa.
5. A method of removing a resist from a substrate as claimed in claim 4 , wherein the stopping of the feeding of the water vapor into the chamber is carried out after about 30 seconds when the feeding of the unsaturated hydrocarbons into the chamber is stopped.