Method for fabricating a semiconductor device with a substrate protrusion
A semiconductor device includes a substrate having an active region and an isolation region, a gate pattern crossing both the active region and the isolation region of the substrate, and a protrusion having a surface higher than that of the substrate over at least an edge of the active region contacting a portion of the isolation region under the gate pattern.
1. A method for fabricating a semiconductor device, the method comprising:
forming an isolation region in a substrate by filling a trench formed in the substrate with a dielectric layer;
forming hard mask patterns over the substrate including an active region and the isolation region;
etching the substrate using the hard mask patterns as an etch mask to form a protrusion having a higher surface than that of the substrate;
forming a gate insulation layer over the substrate including the protrusion;
forming a gate conductive layer and a gate hard mask layer over the gate insulation layer; and
forming a gate pattern overlapping the protrusion by selectively etching the gate hard mask layer, the gate conductive layer, and the gate insulation layer, wherein the protrusion is formed on an upper surface of the active region corresponding to a boundary region between the active region and the isolation region, and five surfaces of the protrusion protruded from the surface of the substrate are surrounded by the gate conductive layer.
2. The method of claim 1 , wherein the protrusion is formed over an edge of the active region that contacts a portion of the isolation region under the gate pattern.
3. The method of claim 1 , wherein the protrusion is formed over a boundary region between the isolation region and the active region under the gate pattern.
4. The method of claim 1 , wherein a width of the protrusion is smaller than that of the gate pattern.
5. The method of claim 1 , wherein a height of the protrusion is greater than a width of the gate pattern.
6. The method of claim 1 , wherein the protrusion has a shape of cube or rectangular parallelepiped.
7. The method of claim 1 , wherein the gate insulation layer is formed to be contacted with an upper surface of the active region.
8. The method of claim 1 , further comprising forming source and drain regions in the active region on opposing sides of the gate pattern, wherein upper surfaces of the source and drain regions are at a lower elevation than the higher surface of the protrusion.
9. A method for fabricating a semiconductor device, the method comprising:
forming an isolation region in a substrate by filling a trench formed in the substrate with a dielectric layer;
forming hard mask patterns over the substrate including an active region and the isolation region;
etching the substrate using the hard mask patterns as an etch mask to form a protrusion having a higher surface than that of the substrate;
forming a gate insulation layer over the substrate including the protrusion;
forming a gate conductive layer and a gate hard mask layer over the gate insulation layer;
forming a gate pattern overlapping the protrusion by selectively etching the gate hard mask layer, the gate conductive layer, and the gate insulation layer, wherein the protrusion is formed on an upper surface of the active region corresponding to a boundary region between the active region and the isolation region, and is surrounded by the gate conductive layer; and
forming source and drain regions in the active region on opposing sides of the gate pattern, wherein upper surfaces of the source and drain regions are at a lower elevation than the higher surface of the protrusion.
10. The method of claim 9 , wherein the protrusion is formed over an edge of the active region that contacts a portion of the isolation region under the gate pattern.
11. The method of claim 9 , wherein the protrusion is formed over a boundary region between the isolation region and the active region under the gate pattern.
12. The method of claim 9 , wherein a width of the protrusion is smaller than that of the gate pattern.
13. The method of claim 9 , wherein a height of the protrusion is greater than a width of the gate pattern.
14. The method of claim 9 , wherein the protrusion has a shape of cube or rectangular parallelepiped.
15. The method of claim 9 , wherein the gate insulation layer is formed to be contacted with an upper surface of the active region.
16. The method of claim 9 , wherein five surfaces of the protrusion protruded from the surface of the substrate are surrounded by the gate conductive layer.