Field effect transistor
A field effect transistor is provided including a gate electrode (for example, 15 ), a source electrode ( 13 ), a drain electrode ( 14 ) and a channel layer ( 11 ) to control current flowing between the source electrode ( 13 ) and the drain electrode ( 14 ) by applying a voltage to the gate electrode ( 15 ). The channel layer ( 11 ) is constituted of an amorphous oxide containing In and Si and having a compositional ratio expressed by Si/(In+Si) of not less than 0.05 and not more than 0.40.
1. A field effect transistor comprising:
a gate electrode;
a source electrode;
a drain electrode; and
a channel layer comprising an oxide material containing In and Si and having a compositional ratio expressed by Si/(In+Si) of not less than 0.05 and not more than 0.40.
2. The field effect transistor according to claim 1 , wherein the compositional ratio expressed by Si/(In+Si) is not less than 0.15 and not more than 0.30.
3. The field effect transistor according to claim 1 , wherein the compositional ratio expressed by Si/(In+Si) is not less than 0.15 and not more than 0.23.
4. A field effect transistor comprising:
a gate electrode;
a source electrode;
a drain electrode; and
a channel layer comprising an oxide material containing In, Zn and Si and having a compositional ratio of Si expressed by Si/(In+Zn+Si) of not less than 0.05 and not more than 0.40.
5. A field effect transistor comprising:
a gate electrode;
a source electrode;
a drain electrode;
a channel layer; and
a gate insulating layer in contact with said channel layer,
wherein said channel layer comprises an oxide material containing In and Si and having a compositional ratio expressed by Si/(In+Si) of not less than 0.05 and not more than 0.40, and
wherein said gate insulating layer comprises of an oxide or nitride, containing Si.
6. The field effect transistor according to claim 5 , wherein said gate insulating layer comprises a silicon oxide.
7. The field effect transistor according to claim 6 , wherein said channel layer and the gate insulating layer are formed by a sputtering method.
8. The field effect transistor according to claim 1 , wherein said oxide material is an amorphous oxide material.
9. The field effect transistor according to claim 4 , wherein said the oxide material is an amorphous oxide material.
10. The field effect transistor according to claim 5 , wherein said oxide material is an amorphous oxide material.