High breakdown voltage double-gate semiconductor device
A double-gate semiconductor device includes a MOS gate and a junction gate, in which the bias of the junction gate is a function of the gate voltage of the MOS gate. The breakdown voltage of the double-gate semiconductor device is the sum of the breakdown voltages of the MOS gate and the junction gate. The double-gate semiconductor device provides improved RF capability in addition to operability at higher power levels as compared to conventional transistor devices. The double-gate semiconductor device may also be fabricated in a higher spatial density configuration such that a common implantation between the MOS gate and the junction gate is eliminated.
1. A device comprising:
a substrate;
a source region defined within the substrate;
a first gate including
a dielectric layer disposed on the substrate and over a channel region defined within the substrate adjoining the source region, and
an electrically conductive gate layer disposed on the dielectric layer;
a well region defined within the substrate and including
a drain region defined within the well region, and
a second gate defined within the well region between the drain region and the first gate;
an electrically conductive path between the channel region and the well region; and
control circuitry operatively connected between the first gate and the second gate and configured to couple a RF signal from the first gate to the second gate.
2. The device of claim 1 wherein the control circuitry comprises a capacitor.
3. The device of claim 1 wherein the electrically conductive path comprises a first doped region within the well adjoining a second doped region outside of the well and adjoining the channel.
4. The device of claim 1 wherein the electrically conductive path comprises a first doped region within the well adjoining the channel.
5. The device of claim 1 wherein the electrically conductive path comprises the well adjoining the channel.
6. The device of claim 1 wherein the substrate comprises P doping, the source and drain regions both comprise N doping, the well comprises N doping, and the second gate comprises P doping.