Low TCR nanocomposite strain gages
View Patent ↗A high temperature thin film strain gage sensor capable of functioning at temperatures above 1400° C. The sensor contains a substrate, a nanocomposite film comprised of an indium tin oxide alloy, zinc oxide doped with alumina or other oxide semiconductor and a refractory metal selected from the group consisting of Pt, Pd, Rh, Ni, W, Ir, NiCrAlY and NiCoCrAlY deposited onto the substrate to form an active strain element. The strain element being responsive to an applied force.
1. A high temperature thin film strain gage sensor capable of functioning at temperatures above 1400° C., said sensor comprising:
a substrate,
a nanocomposite film comprised of an indium tin oxide alloy, zinc oxide doped with alumina or other oxide semiconductor and a refractory metal selected from NiCrAlY and NiCoCrAlY deposited onto said substrate to form an active strain element, said strain element being responsive to an applied force.
2. The thin film strain gage sensor of claim 1 , wherein said ITO alloy comprises about 80-97% weight In 2 O 3 and about 20-3% weight SnO 2 wherein the weights being based on the total weight of the ITO alloy.
3. The thin film strain gage sensor of claim 1 , wherein said ITO alloy comprises about 90% weight In 2 O 3 and about 10% weight SnO 2 wherein the weights being based on the total weight of the ITO alloy.
4. The thin film strain gage sensor of claim 1 , wherein alloys based on zinc oxide doped with alumina or AZO, comprise about 98% weight ZnO and about 2% weight alumina wherein the weights being based on the total weight of the AZO alloy.
5. The thin film strain gage of claim 1 wherein the refractory metal comprises NiCrAlY.
6. The strain gage sensor of claim 1 , wherein said substrate comprises aluminum oxide or an aluminum oxide coated superalloy substrate, an aluminum oxide coated refractory metal substrate, an aluminum oxide coated or silicon dioxide coated stainless steel substrate or other aluminum oxide coated MCrAlY substrates where M=Ni, Fe, Co or thin monolithic ceramic substrates based on alumina or silicon carbide or composites based on these ceramics which are capable of being flexed under moderate pressures.
7. The strain gage sensor of claim 1 , wherein said nanocomposite film is approximately 4 um thick.
8. The strain gage sensor of claim 1 , wherein said nanocomposite comprises the refractory metals NiCoCrAlY and said oxide semiconductors includes ITO.
9. The strain gage sensor of claim 6 , which further comprises a thin metal, ceramic or composite substrate or flexible diaphragm containing one or more transducers to measure deflection of the flexible diaphragm.
10. The strain gage sensor of claim 1 having a TCR in a range of +30 ppm/° C. to −30 ppm/° C. over a temperature range 25′C-1400° C.
11. A pressure sensor capable of functioning at temperatures above 450° C., said pressure sensor comprising:
a housing having a surface,
one or more thin film strain gages, each comprising ITO/NiCoCrAlY,
a thin metal, ceramic or composite flexible diaphragm which is electrically isolated from the one or more thin film strain gages placed on the surface in a Wheatstone bridge configuration to measure small deflections of the flexible diaphragm.