Thin film transistor, method of fabricating the same, and organic light emitting diode display device having the thin film transistor
A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device including the TFT. The TFT includes a substrate having a pixel region and a non-pixel region, a semiconductor layer, a gate insulating layer, a gate electrode, and source and drain electrodes disposed on the pixel region, at least one gettering site disposed on the non-pixel region, and at least one connection portion to connect the at least one gettering site and the semiconductor layer The method of fabricating the TFT includes patterning a polycrystalline silicon (poly-Si) layer to form a plurality of semiconductor layers, connection portions, and at least one gettering site, the semiconductor layers being connected to the at least one gettering site via the connection portions, and annealing the substrate to getter the plurality of semiconductor layers.
1. A thin film transistor (TFT) comprising:
a substrate having a pixel region and a non-pixel region;
a poly-Si layer disposed on the substrate;
a gate insulating layer, a gate electrode, and source and drain electrodes disposed on the pixel region,
wherein the poly-Si layer comprises a semiconductor layer disposed on the pixel region, a gettering site disposed on the non-pixel region, and a connection portion extending from the gettering site to the semiconductor layer, and
wherein the connection portion comprises poly-Si.
2. The TFT according to claim 1 , wherein the gettering site comprises indentations.
3. The TFT according to claim 1 , wherein the amount of metal catalyst in the gettering site is larger than in the semiconductor layer.
4. The TFT according to claim 1 , wherein:
the gate insulating layer is disposed on the semiconductor layer;
the gate electrode is disposed on the gate insulating layer; and
the source and drain electrodes are insulated from the gate electrode and connected to the semiconductor layer.
5. The TFT according to claim 1 , wherein the poly-Si layer comprises a plurality of the gettering sites and a plurality of the connection portions to respectively connect the gettering sites to the semiconductor layer.
6. The TFT according to claim 1 , wherein the connection portion crosses between the non-pixel region and the pixel region.
7. The TFT according to claim 2 , wherein the indentations are doped with n-type or p-type impurities.
8. An organic light emitting diode (OLED) display device comprising:
a substrate having a pixel region and a non-pixel region;
a poly-Si layer disposed on the substrate;
a gate insulating layer, a gate electrode, and source and drain electrodes disposed on the pixel region; and
a first electrode, an organic layer, and a second electrode electrically connected to one of the source and drain electrodes, the organic layer being disposed between the first and second electrodes,
wherein the poly-Si layer comprises a semiconductor layer disposed on the pixel region, a gettering site disposed on the non-pixel region, and a connection portion extending from the gettering site to the semiconductor layer, and
wherein the connection portion comprises poly-Si.
9. The OLED display device according to claim 8 , wherein the gettering site comprises indentations.
10. The OLED display device according to claim 9 , wherein the indentations are doped with n-type or p-type impurities.
11. The OLED display device according to claim 8 , wherein an amount of metal catalyst in the gettering site is larger than in the semiconductor layer.
12. The OLED display device according to claim 8 , wherein:
the gate insulating layer is disposed on the semiconductor layer;
the gate electrode is disposed on the gate insulating layer; and
the source and drain electrodes are insulated from the gate electrode and connected to the semiconductor layer.
13. The OLED display device according to claim 8 , wherein the poly-Si layer comprises a plurality of the gettering sites and a plurality of the connection portions to respectively connect the gettering sites to the semiconductor layer.
14. The OLED display device according to claim 8 , wherein the connection portion crosses between the non-pixel region and the pixel region.
15. A thin film transistor (TFT) comprising:
a substrate having a pixel region and a non-pixel region;
a poly-Si layer disposed on the substrate and comprising a semiconductor layer disposed on the pixel region, a gettering site disposed on the non-pixel region, and a connection portion extending from the gettering site to the semiconductor layer; and
a gate electrode, and source and drain electrodes disposed on the pixel region,
wherein the gettering site comprises indentations formed in a surface of the gettering site.
16. The TFT according to claim 15 , wherein the poly-Si layer comprises a plurality of the gettering sites and a plurality of the connection portions to respectively connect the gettering sites to the semiconductor layer.
17. The TFT according to claim 15 , wherein the connection portion crosses between the non-pixel region and the pixel region.
18. The TFT according to claim 15 , wherein the indentations are doped with n-type or p-type impurities.