Opaque low resistivity silicon carbide
An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.
1. A free-standing article comprising chemical vapor deposited low resistivity silicon carbide having an electrical resistivity of less than 0.10 ohm-cm.
2. The free-standing article of claim 1 , wherein the electrical resistivity of the chemical vapor deposited low resistivity silicon carbide is from about 0.005 ohm-cm to about 0.05 ohm-cm.
3. The free-standing article of claim 1 , wherein the chemical vapor deposited low resistivity silicon carbide is opaque to light at a wavelength of from about 0.1 μm to about 1.0 μm at a temperature of at least about 250° C.
4. The free-standing article of claim 3 , wherein the chemical vapor deposited low resistivity silicon carbide is opaque to light at a wavelength of from about 0.1 μm to about 1.0 μm at a temperature of from at least about 250° C. to about 1450° C.
5. The free-standing article of claim 1 , wherein the chemical vapor deposited low resistivity silicon carbide is opaque to light at a wavelength of from about 0.1 μm to about 1.0 μm at a temperature of from about 300° C. to about 1250° C.
6. The free-standing article of claim 3 , wherein the chemical vapor deposited low resistivity silicon carbide is opaque to light in a wavelength range of from about 0.7 μm to about 0.95 μm.
7. The free-standing article of claim 1 , wherein the chemical vapor deposited low resistivity silicon carbide has a nitrogen content of greater than 1.5×10 19 atoms/cm 3 .
8. The free-standing article of claim 7 , wherein the chemical vapor deposited low resistivity silicon carbide has a nitrogen content of from about 2×10 19 atoms/cm 3 to about 3×10 19 atoms/cm 3 .
9. The free-standing article of claim 1 , wherein the free-standing article is an edge ring or a susceptor ring, a wafer boat, epi susceptors, electrodes, heating elements, and plasma etch components.
10. The free-standing article of claim 9 , wherein the plasma etch components comprise gas diffusion plates, focused rings, plasma screens, or plasma chamber walls.
11. An edge ring comprising chemical vapor deposited low resistivity silicon carbide having an electrical resisitivity of less than 0.10 ohm-cm, the edge ring comprises a circular main ring component that terminates at an outer surface with a support flange and terminates at an inner surface with a flange that is continuous with a wafer holding flange, the wafer holding flange terminates to define a center void.
12. The edge ring of claim 11 , wherein the chemical vapor deposited low resistivity silicon carbide has an electrical resistivity of from about 0.005 ohm-cm to about 0.05 ohm-cm.
13. The edge ring of claim 11 , wherein the chemical vapor deposited low resistivity silicon carbide is opaque to light at a wavelength of from about 0.1 μm to about 1.0 μm at a temperature of at least about 250° C.
14. The edge ring of claim 13 , wherein the chemical vapor deposited low resistivity silicon carbide is opaque to light at a wavelength of from about 0.1 μm to about 1.0 μm at a temperature of from at least about 250° C. to about 1450° C.
15. The edge ring of claim 14 , wherein the chemical vapor deposited low resistivity silicon carbide is opaque to light at a wavelength of from about 0.1 μm to about 1.0 μm at a temperature of from about 300° C. to about 1250° C.
16. The edge ring of claim 13 , wherein the chemical vapor deposited low resistivity silicon carbide is opaque to light from about 0.7 μm to about 0.95 μm.
17. The edge ring of claim 11 , wherein the edge ring has a thickness of from about 0.1 mm to about 1.0 mm.
18. The edge ring of claim 17 , wherein the edge ring has a thickness of from about 0.25 mm to about 0.5 mm.
19. The edge ring of claim 11 , further comprising a semi-conductor wafer resting on the wafer holding flange.
20. The edge ring of claim 11 , wherein the low resisitivty silicon carbide has a nitrogen content greater than 1.5×10 19 atoms/cm 3 .