Electro-optical device and electronic device
View Patent ↗An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation film 45 is disposed under an EL element 203 which comprises a pixel electrode (anode) 46 , an EL layer 47 and a cathode 48 , to make a structure in which heat generated by the EL element 203 is radiated. Further, the third passivation film 45 prevents alkali metals within the EL element 203 from diffusing into the TFTs side, and prevents moisture and oxygen of the TFTs side from penetrating into the EL element 203 . More preferably, heat radiating effect is given to a fourth passivation film 50 to make the EL element 203 to be enclosed by heat radiating layers.
1. A device comprising:
a semiconductor film formed over an insulating surface;
a first insulating film formed over the semiconductor film;
a gate electrode formed over the first insulating film;
a second insulating film formed over the gate electrode wherein the second insulating film has a contact hole;
one of a source wiring and a drain wiring formed over the second insulating film wherein one of the source wiring and the drain wiring is electrically connected to the semiconductor film through the contact hole of the second insulating film;
a third insulating film formed over one of the source wiring and the drain wiring;
a leveling film formed over the third insulating film;
a fourth insulating film formed over the leveling film; and
an electroluminescence element formed over the leveling film, the electroluminescence element comprising a first electrode, an electroluminescence layer formed over the first electrode and a second electrode formed over the electroluminescence layer,
wherein the first insulating film has a thickness within a range from 10 nm to 200 nm,
wherein the second insulating film has a thickness within a range from 400 nm to 1.5 μm,
wherein the third insulating film has a thickness within a range from 10 nm to 1 μm, and
wherein the fourth insulating film has a thickness within a range from 5 nm to 1 μm.
2. The device according to claim 1 , wherein the third insulating film comprises silicon nitride.
3. The device according to claim 1 , wherein the leveling film comprises a material selected from the group consisting of polyimide, polyamide, acrylic and BCB (benzocyclobutane).
4. The device according to claim 1 , wherein the semiconductor film is one selected from the group consisting of a single crystal semiconductor film, a polycrystalline semiconductor film and a microcrystalline semiconductor film.
5. The device according to claim 1 , wherein the first insulating film comprises silicon.
6. The device according to claim 1 , wherein the gate electrode comprises Mo (molybdenum).
7. The device according to claim 1 , wherein one of the source wiring and the drain wiring comprises a first layer, a second layer and a third layer.
8. A device comprising:
a semiconductor film formed over an insulating surface;
a first insulating film formed over the semiconductor film;
a gate electrode formed over the first insulating film;
a second insulating film formed over the gate electrode wherein the second insulating film has a contact hole;
one of a source wiring and a drain wiring formed over the second insulating film wherein one of the source wiring and the drain wiring is electrically connected to the semiconductor film through the contact hole of the second insulating film;
a third insulating film formed over one of the source wiring and the drain wiring;
a fourth insulating film comprising a resin formed over the third insulating film;
a fifth insulating film formed over the fourth insulating film; and
an electroluminescence element formed over the fourth insulating film, the electroluminescence element comprising a first electrode, an electroluminescence layer formed over the first electrode and a second electrode formed over the electroluminescence layer,
wherein the first insulating film has a thickness within a range from 10 nm to 200 nm,
wherein the second insulating film has a thickness within a range from 400 nm to 1.5 μm,
wherein the third insulating film has a thickness within a range from 10 nm to 1 μm and
wherein the fourth insulating film has a thickness within a range from 5 nm to 1 μm.
9. The device according to claim 8 , wherein the third insulating film comprises silicon nitride.
10. The device according to claim 8 , wherein the fourth insulating film comprises a material selected from the group consisting of polyimide, polyimide, acrylic and BCB (benzocyclobutane).
11. The device according to claim 8 , wherein the semiconductor film is one selected from the group consisting of a single crystal semiconductor film, a polycrystalline semiconductor film and a microcrystalline semiconductor film.
12. The device according to claim 8 , wherein the first insulating film comprises silicon.
13. The device according to claim 8 , wherein the gate electrode comprises Mo (molybdenum).
14. The device according to claim 8 , wherein one of the source wiring and the drain wiring comprises a first layer, a second layer and a third layer.
15. A device comprising:
a semiconductor film formed over an insulating surface;
a first insulating film formed over the semiconductor film;
a gate electrode formed over the first insulating film;
a second insulating film formed over the gate electrode wherein the second insulating film has a contact hole;
one of a source wiring and a drain wiring formed over the second insulating film wherein one of the source wiring and the drain wiring is electrically connected to the semiconductor film through the contact hole of the second insulating film;
a third insulating film formed over one of the source wiring and the drain wiring;
a fourth insulating film formed over the third insulating film;
a fifth insulating film formed over the fourth insulating film; and
an electroluminescence element formed over the fourth insulating film, the electroluminescence element comprising a first electrode, an electroluminescence layer formed over the first electrode and a second electrode formed over the electroluminescence layer,
wherein the electroluminescence layer is in contact with an upper surface of the fifth insulating film,
wherein the first insulating film has a thickness within a range from 10 nm to 200 nm,
wherein the second insulating film has a thickness within a range from 400 nm to 1.5 μm,
wherein the third insulating film has a thickness within a range from 10 nm to 1 μm, and
wherein the fourth insulating film has a thickness within a range from 5 nm to 1 μm.
16. The device according to claim 15 , wherein the third insulating film comprises silicon nitride.
17. The device according to claim 15 , wherein the fourth insulating film comprises a material selected from the group consisting of polyimide, polyamide, acrylic and BCB (benzocyclobutane).
18. The device according to claim 15 , wherein the semiconductor film is one selected from the group consisting of a single crystal semiconductor film, a polycrystalline semiconductor film and a microcrystalline semiconductor film.
19. The device according to claim 15 , wherein the first insulating film comprises silicon.
20. The device according to claim 15 , wherein the gate electrode comprises Mo (molybdenum).
21. The device according to claim 15 , wherein one of the source wiring and the drain wiring comprises a first layer, a second layer and a third layer.