Capacitor and method for fabricating the same
A capacitor includes a lower electrode, a first dielectric layer formed over the lower electrode, a second dielectric layer formed over the first dielectric layer, wherein the second dielectric layer includes an amorphous high-k dielectric material, a third dielectric layer formed over the second dielectric layer, and an upper electrode formed over the third dielectric layer. The third dielectric layer can be thicker than the first dielectric layer.
1. A capacitor comprising:
a lower electrode;
a first dielectric layer formed over the lower electrode;
a second dielectric layer formed over the first dielectric layer, wherein the second dielectric layer includes an amorphous high-k dielectric material;
a third dielectric layer formed over the second dielectric layer, wherein the third dielectric layer is thicker than the first dielectric layer; and
an upper electrode formed over the third dielectric layer.
2. The capacitor of claim 1 , wherein the second dielectric layer comprises a tantalum oxide layer.
3. The capacitor of claim 1 , wherein each of the first dielectric layer and the third dielectric layer comprises a zirconium oxide layer.
4. The capacitor of claim 1 , wherein the second dielectric layer comprises a tantalum oxide layer, and each of the first dielectric layer and the third dielectric layer comprises a zirconium oxide layer.
5. The capacitor of claim 1 , wherein the second dielectric layer has a thickness no more than approximately 10 Å.
6. The capacitor of claim 1 , wherein the first dielectric layer is thicker than the second dielectric layer.
7. The capacitor of claim 6 , wherein a total thickness of the first to third dielectric layers ranges from approximately 100 Å to approximately 150 Å.
8. The capacitor of claim 1 , wherein the lower electrode and the upper electrode comprise a metal.
9. The capacitor of claim 8 , wherein the metal comprises one selected from the group consisting of TiN, Ru, Pt, Ir, and HfN, or a combination thereof.