Semiconductor package having chip using copper process
A semiconductor package having chip using copper process is revealed. A chip using copper process is disposed on a substrate. The substrate has a core layer, a copper circuitry with connecting pads, a patterned diffusion barrier, and a solder mask. The copper circuitry is formed on the core layer. The patterned diffusion barrier has such a pattern identical to the one of the copper circuitry that an upper surface of the copper circuitry is completely covered. The substrate further has a bonding layer formed on a portion of the patterned diffusion barrier inside the solder mask's opening. Therefore, diffusion of copper ions from the copper circuitry of the substrate to the active surface of the chip can be avoided to prevent function failure of the chip.
1. A semiconductor package having chip using copper process, comprising:
a substrate having a core layer, a copper circuitry including at least a connecting pad, a patterned diffusion barrier on the copper circuitry, and a solder mask, wherein the copper circuitry is formed on the core layer, the patterned diffusion barrier has such a pattern identical to the copper circuitry that an upper surface of the copper circuitry is completely covered, wherein the solder mask covers the patterned diffusion barrier and the core layer and has an opening to expose a portion of the patterned diffusion barrier on the connecting pad, the substrate further has a bonding layer formed on the portion of the patterned diffusion barrier inside the opening;
a first chip using copper process disposed on the substrate, the first chip having a first copper pad, the first chip including a first semiconductor layer, a first adhesive layer, and a first barrier layer, wherein the first barrier layer is disposed between the first semiconductor layer and the first adhesive layer to completely cover a backside of the first semiconductor layer; and
a first electrical connecting component connecting the first copper pad to the bonding layer.
2. The semiconductor package as claimed in claim 1 , wherein the patterned diffusion barrier is formed between the copper circuitry and the first chip.
3. The semiconductor package as claimed in claim 1 , wherein the material of the patterned diffusion barrier is nickel (Ni).
4. The semiconductor package as claimed in claim 1 , wherein the first electrical connecting component is a bonding wire formed by wire bonding.
5. The semiconductor package as claimed in claim 1 , wherein the materials of the first electrical connecting component and the bonding layer are gold.
6. The semiconductor package as claimed in claim 1 , wherein the patterned diffusion barrier is served as an etching mask to form the copper circuitry without extending to the edges of the core layer.
7. A semiconductor package having chip using copper process, comprising:
a substrate having a core layer, a copper circuitry including at least a connecting pad, a patterned diffusion barrier on the copper circuitry, and a solder mask, wherein the copper circuitry is formed on the core layer, the patterned diffusion barrier has such a pattern identical to the copper circuitry that an upper surface of the copper circuitry is completely covered, wherein the solder mask covers the patterned diffusion barrier and the core layer and has an opening to expose a portion of the patterned diffusion barrier on the connecting pad, the substrate further has a bonding layer formed on the portion of the patterned diffusion barrier inside the opening;
a first chip using copper process disposed on the substrate, the first chip having a first copper pad;
a first electrical connecting component connecting the first copper pad to the bonding layer;
a second chip using copper process disposed on the first chip where the second chip has at least a second copper pad; and
at least a second electrical connecting component electrically connecting the second copper pad to the first copper pad or the bonding layer;
wherein the second chip includes a second semiconductor layer, a second adhesive layer, and a second barrier layer, wherein the second barrier layer is disposed between the second semiconductor layer and the second adhesive layer to completely cover a backside of the second semiconductor layer.
8. The semiconductor package as claimed in claim 7 , wherein the second barrier layer is formed by wafer-level sputtering.
9. The semiconductor package as claimed in claim 7 , wherein the material of the second barrier layer is nickel (Ni).
10. The semiconductor package as claimed in claim 7 , wherein the second semiconductor layer is a thinned chip through backside grinding.