Method for manufacturing semiconductor device
View Patent ↗It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.
1. A method for manufacturing a semiconductor device comprising:
forming a gate electrode layer over a substrate having an insulating surface;
forming a gate insulating layer over the gate electrode layer;
forming a first oxide semiconductor film over the gate insulating layer;
forming a second oxide semiconductor film over the first oxide semiconductor film;
heating the first oxide semiconductor film and the second oxide semiconductor film to be dehydrated or dehydrogenated;
then slowly cooling the first oxide semiconductor film and the second oxide semiconductor film in an oxygen atmosphere;
selectively etching the first oxide semiconductor film and the second oxide semiconductor film after the slowly cooling to form a first oxide semiconductor layer and a second oxide semiconductor layer;
forming a conductive film over the first oxide semiconductor layer and the second oxide semiconductor layer;
selectively etching the first oxide semiconductor layer, the second oxide semiconductor layer, and the conductive film to form a semiconductor layer, a source region, a drain region, a source electrode layer, and a drain electrode layer; and
forming an oxide insulating film which is contact with part of the semiconductor layer over the gate insulating layer, the semiconductor layer, the source region, the drain region, the source electrode layer, and the drain electrode layer so that carrier density is reduced.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the second oxide semiconductor layer is formed into the source region and the drain region by the selectively etching for the first oxide semiconductor layer, the second oxide semiconductor layer, and the conductive film.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein the conductive film is formed into the source electrode layer and the drain electrode layer by the selectively etching for the first oxide semiconductor layer, the second oxide semiconductor layer, and the conductive film.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein the first oxide semiconductor layer is shaped into the semiconductor layer.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor device is incorporated into one selected from the group consisting of an electronic book reader, a television set, a digital photo frame, a portable amusement machine, a slot machine, a portable computer, and a cellular phone.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein the heating is conducted under an inert gas atmosphere.
7. The method for manufacturing a semiconductor device according to claim 6 , wherein the inert gas atmosphere contains a gas selected from the group consisting of nitrogen, helium, neon and argon.
8. A method for manufacturing a semiconductor device comprising:
forming a gate electrode layer over a substrate having an insulating surface;
forming a gate insulating layer over the gate electrode layer;
forming a first oxide semiconductor film over the gate insulating layer;
forming a second oxide semiconductor film over the first oxide semiconductor film;
heating the first oxide semiconductor film and the second oxide semiconductor film under an inert gas atmosphere so that carrier density is increased;
then slowly cooling the first oxide semiconductor film and the second oxide semiconductor film in an oxygen atmosphere;
selectively etching the first oxide semiconductor film and the second oxide semiconductor film after the slowly cooling to form a first oxide semiconductor layer and a second oxide semiconductor layer;
forming a conductive film over the first oxide semiconductor layer and the second oxide semiconductor layer;
selectively etching the first oxide semiconductor layer, the second oxide semiconductor layer, and the conductive film to form a semiconductor layer, a source region, a drain region, a source electrode layer, and a drain electrode layer; and
forming an oxide insulating film which is contact with part of the semiconductor layer over the gate insulating layer, the semiconductor layer, the source region, the drain region, the source electrode layer, and the drain electrode layer so that the carrier density is reduced.
9. The method for manufacturing a semiconductor device according to claim 8 , wherein the inert gas atmosphere is a nitrogen atmosphere or a rare gas atmosphere.
10. The method for manufacturing a semiconductor device according to claim 8 , wherein the first oxide semiconductor film and the second oxide semiconductor film are heated at 400° C. or higher under an inert gas atmosphere.
11. The method for manufacturing a semiconductor device according to claim 8 , wherein the first oxide semiconductor film and the second oxide semiconductor film are heated at 400° C. or higher under an inert gas atmosphere and then slowly cooled to higher than or equal to room temperature and lower than 100° C. under an oxygen atmosphere.
12. The method for manufacturing a semiconductor device according to claim 8 , wherein the second oxide semiconductor layer is formed into the source region and the drain region by the selectively etching for the first oxide semiconductor layer, the second oxide semiconductor layer, and the conductive film.
13. The method for manufacturing a semiconductor device according to claim 8 , wherein the conductive film is formed into the source electrode layer and the drain electrode layer by the selectively etching for the first oxide semiconductor layer, the second oxide semiconductor layer, and the conductive film.
14. The method for manufacturing a semiconductor device according to claim 8 , wherein the first oxide semiconductor layer is shaped into the semiconductor layer.
15. The method for manufacturing a semiconductor device according to claim 8 , wherein the semiconductor device is incorporated into one selected from the group consisting of an electronic book reader, a television set, a digital photo frame, a portable amusement machine, a slot machine, a portable computer, and a cellular phone.
16. A method for manufacturing a semiconductor device comprising:
forming a gate electrode layer over a substrate having an insulating surface;
forming a gate insulating layer over the gate electrode layer;
forming a first oxide semiconductor film over the gate insulating layer;
forming a second oxide semiconductor film over the first oxide semiconductor film;
heating the first oxide semiconductor film and the second oxide semiconductor film under reduced pressure so that carrier density is increased:
then slowly cooling the first oxide semiconductor film and the second oxide semiconductor film in an oxygen atmosphere;
selectively etching the first oxide semiconductor film and the second oxide semiconductor film after the slowly cooling to form a first oxide semiconductor layer and a second oxide semiconductor layer;
forming a conductive film over the first oxide semiconductor layer and the second oxide semiconductor layer;
selectively etching the first oxide semiconductor layer, the second oxide semiconductor layer, and the conductive film to form a semiconductor layer, a source region, a drain region, a source electrode layer, and a drain electrode layer; and
forming an oxide insulating film which is contact with part of the semiconductor layer over the gate insulating layer, the semiconductor layer, the source region, the drain region, the source electrode layer, and the drain electrode layer so that the carrier density is reduced.
17. The method for manufacturing a semiconductor device according to claim 16 , wherein a carrier density of the first oxide semiconductor layer whose carrier density is increased is 1×10 18 /cm 3 or higher.
18. The method for manufacturing a semiconductor device according to claim 16 , wherein the second oxide semiconductor layer is formed into the source region and the drain region by the selectively etching for the first oxide semiconductor layer, the second oxide semiconductor layer, and the conductive film.
19. The method for manufacturing a semiconductor device according to claim 16 , wherein the conductive film is formed into the source electrode layer and the drain electrode layer by the selectively etching for the first oxide semiconductor layer, the second oxide semiconductor layer, and the conductive film.
20. The method for manufacturing a semiconductor device according to claim 16 , wherein the first oxide semiconductor layer is shaped into the semiconductor layer.
21. The method for manufacturing a semiconductor device according to claim 16 , wherein the semiconductor device is incorporated into one selected from the group consisting of an electronic book reader, a television set, a digital photo frame, a portable amusement machine, a slot machine, a portable computer, and a cellular phone.
22. A method for manufacturing a semiconductor device comprising:
forming a first oxide semiconductor film over a substrate having an insulating surface;
forming a second oxide semiconductor film over the first oxide semiconductor film;
heating the first oxide semiconductor film and the second oxide semiconductor film to be dehydrated or dehydrogenated;
then slowly cooling the first oxide semiconductor film and the second oxide semiconductor film in an oxygen atmosphere;
selectively etching the first oxide semiconductor film and the second oxide semiconductor film after the slowly cooling to form a first oxide semiconductor layer and a second oxide semiconductor layer;
forming a conductive film over the first oxide semiconductor layer and the second oxide semiconductor layer;
selectively etching the first oxide semiconductor layer, the second oxide semiconductor layer, and the conductive film to form a semiconductor layer, a source region, a drain region, a source electrode layer, and a drain electrode layer; and
forming an oxide insulating film which is contact with part of the semiconductor layer, the semiconductor layer, the source region, the drain region, the source electrode layer, and the drain electrode layer so that carrier density is reduced.
23. A method for manufacturing a semiconductor device comprising:
forming a first oxide semiconductor film over a substrate;
forming a second oxide semiconductor film over the first oxide semiconductor film;
heating at least the first oxide semiconductor film to remove at least a portion of hydrogen contained in the first oxide semiconductor film;
cooling the first oxide semiconductor film in an oxygen atmosphere;
selectively etching the first oxide semiconductor film and the second oxide semiconductor film after the cooling to form a first oxide semiconductor layer and a second oxide semiconductor layer;
forming a conductive film over the first oxide semiconductor layer and the second oxide semiconductor layer;
selectively etching the first oxide semiconductor layer, the second oxide semiconductor layer, and the conductive film to form a semiconductor layer, a source region, a drain region, a source electrode layer, and a drain electrode layer; and
forming an oxide insulating film which is contact with part of the semiconductor layer, the semiconductor layer, the source region, the drain region, the source electrode layer, and the drain electrode layer so that carrier density is reduced.