IP Library Granted Patent US 8,217,694
Granted Patent B2
US 8,217,694 · App. 12/901,811 · Granted Jul 10, 2012

Method and apparatus for synchronizing with a clock signal

Assignee: Micron Technology, Inc.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,217,694
App. No.
12/901,811
Granted
Jul 10, 2012
Kind
B2
Abstract

Clock synchronization and skew adjustment circuits that utilize differing unit delay elements in their delay lines in either a graduated or a stepped unit time delay arrangement are for synchronizing with a clock signal. These graduated or a stepped unit time delays allow reduction in the number of the fine unit delay elements of the delay lines by placing a fine delay element granularity at the most critical timings to sense and adjust for the portion of the clock signal time period that are high speed or critical.

Claims (39)

1. A synchronous mirror delay (SMD) circuit, comprising:

an input buffer;

a data path model coupled to the input buffer;

a forward delay line coupled to the data path model;

a control circuit coupled to the forward delay line and coupled to the input buffer; and

a backward delay line coupled to the control circuit and coupled to the input buffer;

wherein the forward delay line and the backward delay lines each contain a plurality of serially-connected delay elements of differing unit time delay;

wherein the control circuit is configured to reproduce a clock signal received at the input buffer by selectively adjusting a number of serially-connected delay elements utilized by the forward delay line and the backward delay line to accommodate a time period of the clock signal within each of the forward delay line and the backward delay line;

wherein the forward delay line and the backward delay line each comprise a portion having a set of three serially-connected delay elements in which a first delay element of the set of three serially-connected delay elements has a first unit time delay, a second delay element of the set of three serially-connected delay elements has a second unit time delay and a third delay element of the set of three serially-connected delay elements has a third unit time delay;

wherein the second delay element of the set of three-serially connected delay elements is interposed between the first and the third delay elements of the serially-connected delay elements in the forward delay line and in the backward delay line; and

wherein a value of the second unit time delay is between a value of the first unit time delay and a value of the third unit time delay.

2. The synchronous mirror delay (SMD) circuit of claim 1 , wherein the forward and backward delay lines are selected from the group consisting of stepped delay lines, having a stepped profile in the unit time delay of the serially-connected delay elements of the delay lines, and graduated delay lines, having a graduated profile in the unit time delay of the serially-connected delay elements of the delay lines.

3. The synchronous mirror delay (SMD) circuit of claim 2 , wherein the stepping or graduating of the profile of unit time delay of the delay elements are selected according to a resolution de-rating table or a curve specified to achieve acceptable resolution at specified operating frequency ranges.

4. The synchronous mirror delay (SMD) circuit of claim 2 , wherein the stepped or graduated profile of the unit time delay of the serially-connected delay elements have multiple peaks and valleys in the profile, where the unit time delay of the serially-connected delay elements are stepped or graduated up and/or down into.

5. The synchronous mirror delay (SMD) circuit of claim 2 , wherein the plurality of serially-connected delay elements of the forward delay line contains the same delay elements as the plurality of serially-connected delay elements of the backward delay line.

6. The synchronous mirror delay (SMD) circuit of claim 2 , wherein the control circuit is configured to selectively adjust a number of the plurality of serially-connected delay elements of the forward delay line and a number of the plurality of serially-connected delay elements of the backward delay line to the same number in response to receiving a clock signal.

7. The synchronous mirror delay (SMD) circuit of claim 1 , wherein the forward and the backward delay lines each comprise at least one additional delay element connected serially with the set of three serially-connected delay elements of the forward and the backward delay lines.

8. The synchronous mirror delay (SMD) circuit of claim 7 , wherein the first delay element of the set of three serially-connected delay elements of each of the forward and the backward delay lines is interposed between the additional delay element and the second delay element of the set of three serially-connected delay elements, and wherein the additional delay element has a fourth unit time delay having a value that is greater than or less than the value of the first unit time delay.

9. The synchronous mirror delay (SMD) circuit of claim 8 , wherein the value of the fourth unit time delay is greater than the value of the first unit time delay and the value of the second unit time delay is less than the first unit time delay, thereby producing a decreasing delay line unit delay profile of each of the forward and the backward delay lines.

10. The synchronous mirror delay (SMD) circuit of claim 8 , wherein the value of the fourth unit time delay is less than the value of the first unit time delay and the value of the second unit time delay is greater than the value of the first unit time delay, thereby producing an increasing delay line unit delay profile of each of the forward and the backward delay lines.

11. The synchronous mirror delay (SMD) circuit of claim 8 , wherein the value of the fourth unit time delay is greater than the value of the first unit time delay and the value of the second unit time delay is greater than the first unit time delay, thereby producing a valley in a delay line unit delay profile of each of the forward and the backward delay lines.

12. The synchronous mirror delay (SMD) circuit of claim 8 , wherein the value of the fourth unit time delay is less than the value of the first unit time delay and the value of the second unit time delay is less than the value of the first unit time delay, thereby producing a peak in a delay line unit delay profile of each of the forward and the backward delay lines.

13. The synchronous mirror delay (SMD) circuit of claim 1 , wherein each delay element is selected from a group consisting of a NAND gate coupled to an inverter, two series coupled NAND gates, two series coupled inverters, skew limited delays and RC delays.

14. The synchronous mirror delay (SMD) circuit of claim 1 , further comprising an interface, wherein the interface is configured to receive an external clock signal and is further configured to couple the received external clock signal to the input buffer.

15. The synchronous mirror delay (SMD) circuit of claim 14 , wherein the control circuitry is further configured to output the reproduced clock signal, where the reproduced clock signal comprises a skew adjusted clock signal synchronized with the received external clock signal.

16. A method of operating a synchronous mirror delay (SMD) circuit comprising:

receiving a clock signal having a clock signal time period; and

reproducing the clock signal by selectively adjusting a number of serially-connected delay elements utilized by a forward delay line and a backward delay line to synchronize with the clock signal, wherein the forward and backward delay lines contain a plurality of serially-connected delay elements of differing unit time delay arranged to have a profile of unit time delay of the serially-connected delay elements selected from the group consisting of a graduated profile and a stepped profile;

wherein the forward delay line and the backward delay line each comprise a portion having a set of three serially-connected delay elements in which a first delay element of the set of three serially-connected delay elements has a first unit time delay, a second delay element of the set of three serially-connected delay elements has a second unit time delay and a third delay element of the set of three serially-connected delay elements has a third unit time delay;

wherein the second delay element of the set of three-serially connected delay elements is interposed between the first and the third delay elements of the serially-connected delay elements in the forward delay line and in the backward delay line; and

wherein a value of the second unit time delay is between a value of the first unit time delay and a value of the third unit time delay.

17. The method of claim 16 , further comprising selecting the unit time delay of each of the plurality of delay elements of the forward and backward delay lines according to a resolution de-rating table or a curve specified to achieve acceptable resolution at specified operating frequency ranges.

18. The method of claim 16 , further comprising selecting the unit time delay of each of the plurality of delay elements of the forward and backward delay lines such that the stepped or graduated profile of the unit time delay of the serially-connected delay elements has multiple peaks and valleys in the profile.

19. The method of claim 16 , wherein selectively adjusting a number of serially-connected delay elements utilized by the forward and the backward delay lines further comprises selectively adjusting a number of serially-connected delay elements utilized by the forward and the backward delay lines where each of the forward and the backward delay lines comprises at least one additional delay element connected serially with the set of three serially-connected delay elements of the forward and the backward delay lines.

20. The method of claim 19 , wherein selectively adjusting a number of serially-connected delay elements utilized by the forward and the backward delay lines comprises selectively adjusting a number of serially-connected delay elements utilized by the forward and the backward delay lines, wherein the first delay element of each set of three serially-connected delay elements of the forward and the backward delay lines is interposed between a particular additional delay element and the second delay element of each set of three serially-connected delay elements, and wherein each of the particular additional delay elements has a fourth unit time delay having a value that is greater than or less than the value of the first unit time delay.

21. The method of claim 20 , wherein selectively adjusting a number of serially-connected delay elements utilized by the forward and the backward delay lines comprises selectively adjusting a number of serially-connected delay elements utilized by the forward and the backward delay lines, wherein the value of the fourth unit time delay of each of the particular additional delay elements of the forward and the backward delay lines is greater than the value of the first unit time delay and where the value of the second unit time delay is less than the first unit time delay, thereby producing a decreasing delay line unit delay profile of each of the forward and the backward delay lines.

22. The method of claim 20 , wherein selectively adjusting a number of serially-connected delay elements utilized by the forward and the backward delay lines comprises selectively adjusting a number of serially-connected delay elements utilized by the forward and the backward delay lines, wherein the value of the fourth unit time delay of each of the particular additional delay elements of the forward and the backward delay lines is less than the first unit time delay and where the value of the second unit time delay is greater than the value of the first unit time delay, thereby producing an increasing delay line unit delay profile of each of the forward and the backward delay lines.

23. The method of claim 20 , wherein selectively adjusting a number of serially-connected delay elements utilized by the forward and the backward delay lines comprises selectively adjusting a number of serially-connected delay elements utilized by the forward and the backward delay lines, wherein the value of the fourth unit time delay of each of the particular additional delay elements of the forward and the backward delay lines is greater than the value of the first unit time delay and where the value of the second unit time delay is greater than the first unit time delay, thereby producing a valley in a delay line unit delay profile of each the forward and the backward delay lines.

24. The method of claim 20 , wherein selectively adjusting a number of serially-connected delay elements utilized by the forward and the backward delay lines comprises selectively adjusting a number of serially-connected delay elements utilized by the forward and the backward delay lines, wherein the value of the fourth unit time delay of each of the particular additional delay elements of the forward and the backward delay lines is less than the value of the first unit time delay and where the value of the second unit time delay is less than the value of the first unit time delay, thereby producing a peak in a delay line unit delay profile of each of the forward and the backward delay lines.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
Continuity (3)
Division 12345039 · Dec 29, 2008
Continuation 11132502 · May 19, 2005
Related Publication 20110057698A1 · Mar 10, 2011