Power amplifier
A power amplifier comprises: an amplifying transistor for amplifying an input signal; a reference voltage generating circuit which generates a reference voltage; a bias circuit generating a bias voltage based on the reference voltage and supplying the bias voltage to the amplifying transistor; and a booster elevating an enable voltage input from outside and outputting the enable voltage. The reference voltage generating circuit is turned ON/OFF in correspondence with an output voltage of the booster. The booster includes: an enable terminal to which the enable voltage is applied; a power source terminal connected to a power source; a transistor having a control electrode connected to the enable terminal, a first electrode connected to the power source terminal, and a second electrode that is grounded; and a FET resistor connected between the first electrode of the transistor and the power source terminal. A gate electrode of the FET resistor is open.
1. A power amplifier comprising:
an amplifying transistor for amplifying an input signal;
a reference voltage generating circuit which generates a reference voltage;
a bias circuit generating a bias voltage based on the reference voltage and supplying the bias voltage to the amplifying transistor; and
a booster elevating an enable voltage input from outside and outputting the enable voltage, after boosting, as the output voltage of the booster, wherein
the reference voltage generating circuit is turned ON/OFF corresponding to the output voltage of the booster,
the booster includes:
an enable terminal to which the enable voltage is applied,
a power source terminal connected to a power source,
a transistor having a control electrode connected to the enable terminal, a first electrode connected to the power source terminal, and a second electrode that is grounded, and
a field effect transistor (FET) resistor having a gate electrode and connected between the first electrode of the transistor and the power source terminal, wherein the gate electrode of the FET resistor is open.
2. The power amplifier according to claim 1 , further comprising a diode connected between the FET resistor and the power source terminal.
3. The power amplifier according to claim 1 , wherein the FET resistor includes two FET resistors connected in series.
4. The power amplifier according to claim 1 , wherein the FET resistor has a dual gate.
5. The power amplifier according to claim 1 , wherein
the FET resistor includes a plurality of impurity diffused regions located, parallel to each other, on a semiconductor substrate, and gate electrodes in Schottky contact with the plurality of impurity diffused regions, respectively, and
the gate electrodes are joined to each other.
6. The power amplifier according to claim 1 , wherein the transistor is an enhancement-mode FET.
7. The power amplifier according to claim 2 , wherein the diode includes a diode-connected enhancement-mode FET.
8. The power amplifier according to claim 2 , wherein the diode includes two diode-connected enhancement-mode FETs connected in series.
9. The power amplifier according to claim 1 , further comprising a back-gate electrode connected immediately under the FET resistor or a side-gate electrode connected proximate the FET resistor, wherein a constant or variable potential is supplied to the back-gate electrode or the side-gate electrode.
10. A power amplifier comprising:
an amplifying transistor for amplifying an input signal;
a reference voltage generating circuit which generates a reference voltage;
a bias circuit generating a bias voltage based on the reference voltage and supplying the bias voltage to the amplifying transistor; and
a booster elevating an enable voltage input from outside and outputting the enable voltage, after boosting, as the output voltage of the booster, wherein
the reference voltage generating circuit is turned ON/OFF corresponding to an output voltage of the booster,
the booster includes:
an enable terminal to which the enable voltage is applied,
a power source terminal connected to a power source,
a first transistor having a control electrode connected to the enable terminal, a first electrode connected to the power source terminal, and a second electrode that is grounded,
a first field effect transistor (FET) resistor having a gate electrode connected between the first electrode of the first transistor and the power source terminal,
a second transistor having a control electrode connected to the first electrode of the first transistor, a first electrode connected to the power source terminal, and a second electrode that is grounded,
a second FET resistor having a gate electrode and connected between the first electrode of the second transistor and the power source terminal,
a first back-gate electrode connected immediately under the first FET resistor or a first side-gate electrode connected proximate the first FET resistor, and
a second back-gate electrode connected immediately under the second FET resistor or a second side-gate electrode connected proximate the second FET resistor, wherein
the gate electrodes of the first and second FET resistors are open,
the first electrode of the first transistor is connected to the second back-gate electrode or the second side-gate electrode, and
the first electrode of the second transistor is connected to the first back-gate electrode or the first side-gate electrode.
11. A power amplifier comprising:
an amplifying transistor for amplifying an input signal;
a reference voltage generating circuit which generates a reference voltage;
a bias circuit generating a bias voltage based on the reference voltage and supplying the bias voltage to the amplifying transistor; and
a booster elevating an enable voltage input from outside and outputting the enable voltage, after boosting, as the output voltage of the booster, wherein
the reference voltage generating circuit is turned ON/OFF corresponding to an output voltage of the booster,
the booster includes:
an enable terminal to which the enable voltage is applied,
a power source terminal connected to a power source,
a first transistor having a control electrode connected to the enable terminal, a first electrode connected to the power source terminal, and a second electrode that is grounded,
a first field effect transistor(FET) resistor having a gate electrode and connected between the first electrode of the first transistor and the power source terminal,
a second transistor having a control electrode connected to the first electrode of the first transistor, a first electrode connected to the power source terminal, and a second electrode that is grounded,
a second FET resistor having a gate electrode and connected between the first electrode of the second transistor and the power source terminal,
a first back-gate electrode connected immediately under the first FET resistor or a first side-gate electrode connected proximate the first FET resistor,
a second back-gate electrode connected immediately under the second FET resistor or a second side-gate electrode connected proximate the second FET resistor, wherein
the gate electrodes of the first and second FET resistors are open,
the first electrode of the first transistor is connected to the first back-gate electrode or the first side-gate electrode, and
the first electrode of the second transistor is connected to the second back-gate electrode or the second side-gate electrode.
12. The power amplifier according to claim 1 , further comprising a doped region surrounding the booster, wherein a constant or variable potential is supplied to the doped region.
13. The power amplifier according to claim 1 , wherein the reference voltage generating circuit includes a third transistor switching whether the reference voltage generating circuit is separated from a grounding point, corresponding to the output voltage of the booster.
14. The power amplifier according to claim 1 , wherein the bias circuit includes a third transistor switching whether the bias circuit is separated from a grounding point, corresponding to the output voltage of the booster.
15. The power amplifier according to claim 13 , wherein the third transistor includes an enhancement-mode FET.
16. The power amplifier according to claim 14 , wherein the third transistor includes an enhancement-mode FET.