Apparatus for increasing electric conductivity to a semiconductor wafer substrate when exposure to electron beam
An apparatus for increasing electric conductivity to a wafer substrate when exposures to electron beam irradiation is disclosed. More specifically, a more free mechanical contact between a wafer and electric contact pins (within an electrostatic chuck) is provided to significantly reduce the scratch and damage on the wafer backside.
1. An apparatus for increasing electric conductivity to a wafer substrate, comprising:
an electrostatic chuck to hold a wafer, the electrostatic chuck having one or more pin housing holes; and
one or more of electric contact pins individual corresponding to the pin housing holes;
wherein, the opening of each pin housing hole is significantly wider than a corresponding portion of electric contact pin, such that the electric contact pins inside the pin housing holes can freely rotate to release sliding stress in all directions while the wafer substrate slides on the electrostatic chuck.
2. The apparatus as claimed in claim 1 , wherein the opening is significantly wider than a narrower tip of electric contact pin when the electric contact pin has a wider base and a narrower tip.
3. The apparatus as claimed in claim 1 , wherein the opening is wider than the wider base of electric contact pin when the electric contact pin has a wider base and a narrower tip.
4. The apparatus as claimed in claim 1 , each the electric contact pin is electrically coupled a stage ground.
5. An apparatus for increasing electric conductivity to a wafer substrate, comprising:
an electrostatic chuck to hold said wafer, the electrostatic chuck having a plurality pin housing holes that locate on a minor area of the electrostatic chuck;
one or more of electric contact pins individually corresponding to said pin housing holes; and
one or more of compressing springs individually coupled to the electric contact pins for providing more directions freely to move while the electrostatic chuck is applying chucking force to the wafer substrate.
6. The apparatus as claimed in claim 5 , wherein the minor area corresponds to an edge of a wafer.
7. The apparatus as claimed in claim 5 , wherein the minor area corresponds to a pattern free area of a wafer.
8. The apparatus as claimed in claim 5 , wherein the minor area corresponds to a specific portion of said wafer, the specific portion containing less critical device patterns on a wafer.
9. The apparatus as claimed in claim 5 , each electric contact pin is electrically coupled to a stage ground.
10. The apparatus as claimed in claim 1 , wherein the electric contact pins are non-needle type tip.
11. The apparatus as claimed in claim 10 , wherein the non-needle type pin is an ax shape with blade ridge.
12. The apparatus as claimed in claim 10 , wherein said electric contact pins are electrically coupled to a stage ground.
13. The apparatus as claimed in claim 10 , wherein the non-needle type pin has a rounded top.
14. The apparatus as claimed in claim 1 , further comprising one or more of compressing springs individually coupled to the electric contact pins for providing more directions free to move while the electrostatic chuck applying chucking force.
15. The apparatus as claimed in claim 14 , wherein the compressing springs are electrically coupled to a stage ground.