Nitride semiconductor heterostructures and related methods
Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10 6 cm −2 .
1. A solid-state ultraviolet (UV) light-emitting device comprising:
at least two layers each having a composition selected from the group consisting of AlN, GaN, InN, and any binary or tertiary alloy combination thereof; and
therebelow,
a single-crystal AlN substrate having (i) a dislocation density of about 10,000 cm −2 or less, (ii) a diameter greater than about 25 mm, and (iii) a top surface the entirety of which has substantially a single crystalline orientation.
2. The light-emitting device of claim 1 , wherein the light-emitting device emits UV radiation at wavelengths ranging from about 200 nm and 320 nm.
3. The light-emitting device of claim 1 , wherein the orientation is c-face, Al-polarity.
4. The light-emitting device of claim 1 , wherein the orientation is c-face, N-polarity.
5. The light-emitting device of claim 1 , wherein the orientation is m-face.
6. The light-emitting device of claim 1 , wherein the orientation is a-face.
7. The light-emitting device of claim 1 , further comprising an AlGaN graded layer disposed between the at least two layers and the single-crystal AlN substrate.
8. The light-emitting device of claim 7 , wherein a thickness of the AlGaN graded layer is approximately 1 μm.
9. The light-emitting device of claim 7 , wherein the AlGaN graded layer is graded from approximately pure AlN to approximately Al 0.5 Ga 0.5 N.
10. The light-emitting device of claim 7 , further comprising two metal contacts disposed above the AlGaN graded layer, each metal contact in direct contact with one of the at least two layers.
11. The light-emitting device of claim 1 , wherein the light-emitting device is a light-emitting diode.
12. The light-emitting device of claim 1 , wherein the light-emitting device is a laser diode.
13. The light-emitting device of claim 12 , further comprising a plurality of quantum wells disposed between the at least two layers.
14. The light-emitting device of claim 12 , wherein the at least two layers are patterned to laterally confine radiation in a direction substantially parallel to the top surface of the single-crystal AlN substrate.
15. A solid-state ultraviolet (UV) light-emitting diode comprising;
at least two layers each having a composition selected from the group consisting of AlN, GaN, InN, and any binary or tertiary alloy combination thereof;
thereunder, a single-crystal AlN substrate having a dislocation density of about 10,000 cm −2 or less; and
disposed between the at least two layers and the single-crystal AlN substrate, an Al x Ga 1-x N graded layer having (i) a lattice parameter that varies over its thickness and (ii) thickness of less than 1 μm per 1% change in the lattice parameter,
wherein the light-emitting diode converts a >10% fraction of electric power into UV radiation power.
16. The light-emitting device of claim 7 , wherein a grading rate of the AlGaN graded layer is approximately 50% Ga/μm.
17. The light-emitting diode of claim 15 , wherein the Al x Ga 1-x N graded layer is undoped.
18. The light-emitting diode of claim 15 , further comprising two metal contacts disposed above the Al x Ga 1-x N graded layer, each metal contact in direct contact with one of the at least two layers.
19. The light-emitting diode of claim 15 , wherein the thickness of the Al x Ga 1-x N graded layer is approximately 1 μm.
20. The light-emitting diode of claim 15 , wherein the Al x Ga 1-x N graded layer is graded from approximately pure AlN to approximately Al 0.5 Ga 0.5 N.
21. The light-emitting device of claim 1 , wherein an area of the single-crystal AlN substrate exceeding 5×5 mm 2 is substantially devoid of dislocations.
22. The light-emitting diode of claim 15 , wherein an area of the single-crystal AlN substrate exceeding 5×5 mm 2 is substantially devoid of dislocations.
23. The light-emitting diode of claim 15 , wherein a discontinuity between (i) x at a portion of the Al x Ga 1-x N graded layer closest to the single-crystal AlN substrate, and (ii) the Al content of 1 of the single-crystal AlN substrate, is greater than 0.1.
24. The light-emitting diode of claim 23 , wherein x at the portion of the Al x Ga 1-x N graded layer closest to the single-crystal AlN substrate is less than approximately 0.35.
25. The light-emitting diode of claim 15 , wherein the thickness of the Al x Ga 1-x N graded layer is less than 0.1 μm per 2.2% change in the lattice parameter of the Al x Ga 1-x N graded layer.
26. The light-emitting diode of claim 15 , wherein a dislocation density of the at least two layers is approximately equal to the dislocation density of the single-crystal AlN substrate.
27. The light-emitting diode of claim 15 , wherein the single-crystal AlN substrate has (i) a diameter greater than about 25 mm and (ii) a top surface the entirety of which has substantially a single crystalline orientation.