IP Library › Granted Patent US 8,222,666
Granted Patent B2
US 8,222,666 · App. 12/636,409 · Granted Jul 17, 2012

Light-emitting device and electronic device

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,222,666
App. No.
12/636,409
Granted
Jul 17, 2012
Kind
B2
Abstract

An object is to provide a light-emitting device having a structure in which an external connection portion can easily be connected and a method for manufacturing the light-emitting device. A light-emitting device includes a lower support 110 , a base insulating film 112 over the lower support 110 which has a through-hole 130 , a light-emitting element 127 over the base insulating film 112 , and an upper support 122 over the light-emitting element 127 . An electrode 131 is provided in the through-hole 130 , and the external connection terminal 132 electrically connected to the electrode 131 is provided below the base insulating film 112 . The external connection terminal 132 is electrically connected to the external connection portion 133 and functions as a terminal that inputs a signal or a power supply into the light-emitting device. This light-emitting device has a structure in which an external connection portion can easily be connected.

Claims (47)

1. A light-emitting device comprising:

a first support;

a first insulating film over the first support, wherein the first insulating film has a through-hole;

a thin film transistor over the first insulating film;

a second insulating film over the thin film transistor;

a second support over the second insulating film;

an adhesive layer between the second insulating film and the second support;

an electrode over the second insulating film and in the through-hole; and

an external connection portion below the first insulating film and electrically connected to the electrode,

wherein the electrode is in contact with the adhesive layer.

2. A light-emitting device comprising:

a first support;

an insulating film over the first support, wherein the insulating film has a through-hole;

a thin film transistor over the insulating film, wherein the thin film transistor includes a semiconductor layer, a gate insulating film and a gate electrode;

a second support over the thin film transistor;

an adhesive layer between the thin film transistor and the second support;

an electrode on the gate insulating film and in the through-hole; and

an external connection portion below the insulating film and electrically connected to the electrode,

wherein the electrode is in contact with the adhesive layer.

3. A light-emitting device comprising:

a first support;

an insulating film over the first support, wherein the insulating film has a through-hole;

a light-emitting element over the insulating film;

a second support over the light-emitting element;

an adhesive layer between the light-emitting element and the second support;

an electrode in the through-hole;

an external connection terminal below the insulating film and electrically connected to the electrode; and

an external connection portion electrically connected to the external connection terminal,

wherein the electrode is in contact with the adhesive layer.

4. A light-emitting device comprising:

a first support;

an insulating film over the first support, wherein the insulating film has a through-hole;

a light-emitting element over the insulating film;

a second support over the light-emitting element;

an adhesive layer between the light-emitting element and the second support;

an electrode in the through-hole; and

an external connection portion below the insulating film and electrically connected to the electrode,

wherein the electrode is in contact with the adhesive layer.

5. The light-emitting device according to any one of claims 1 to 4 , wherein the first support and the second support are flexible.

6. The light-emitting device according to any one of claims 1 to 4 , wherein the first support is provided so as to expose the electrode in the through-hole.

7. The light-emitting device according to any one of claims 1 to 4 , further comprising a protective member below the first support and the external connection portion.

8. The light-emitting device according to any one of claims 1 to 4 , wherein the first support has a notch portion so as to expose the electrode in the through-hole.

9. The light-emitting device according to any one of claims 1 to 4 , wherein the first support has an opening portion so as to expose the electrode in the through-hole.

10. The light-emitting device according to any one of claims 1 to 4 ,

wherein a distance between a third side of the first support which is close to the external connection portion and a fourth side of the first support which is opposite to the third side is shorter than a distance between a first side of the light-emitting device which is close to the external connection portion and a second side of the light-emitting device which is opposite to the first side.

11. The light-emitting device according to any one of claims 1 to 4 , wherein the first support covers at least part of the external connection portion.

12. An electronic device comprising the light-emitting device according to any one of claims 1 to 4 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 11, 2009
From: HATANO, KAORU; SEO, SATOSHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 023643/0924 →
Priority Claims (1)
JP 2008-320939 · Dec 17, 2008 · national
Continuity (1)
Related Publication 20100148209A1 · Jun 17, 2010