Semiconductor device
A field-effect transistor ( 142 ) includes a lowly p-doped region 110 formed on a surface of a substrate ( 102 ), an n-doped drain region 112 and n-doped source region 114 arranged on a surface of the lowly p-doped region 110 , and a device isolation insulating film 132 and device isolation insulating film 134 . Here, the device isolation insulating film 132 is formed greater in film thickness than the device isolation insulating film 134 ; and in the n-doped source region 114 , the peak concentration section having a highest dopant concentration is formed in a deeper position than in the n-doped drain region 112.
1. A semiconductor device comprising:
a substrate having a first semiconductor region of a first conduction type in a surface portion of the substrate;
a second semiconductor region of a second conduction type formed in a part of the surface of the first semiconductor region;
a first electrode formed over the second semiconductor region;
a third semiconductor region of the second conduction type formed in a part of the surface of the first semiconductor region;
a second electrode formed over the third semiconductor region and electrically connected to the third semiconductor region;
a fourth semiconductor region of the first conduction type formed in a part of the surface of the first semiconductor region;
a third electrode electrically connected to the fourth semiconductor region and electrically connected to the fourth semiconductor region and the second electrode;
a gate insulating film formed so as to cover the surface of the first semiconductor region between the second semiconductor region and the third semiconductor region;
a gate electrode formed over gate insulating film;
a buried semiconductor region of the second conduction type formed under the first semiconductor region; and
a sinker layer of the second conduction type formed over the buried semiconductor region and extending from the buried semiconductor region to the surface of the substrate such that the first semiconductor region is surrounded by the sinker layer and the buried semiconductor region,
the sinker layer electrically connected to the first electrode.
2. The semiconductor device according to claim 1 ,
wherein the second electrode and the third electrode comprise silicide layers formed over the third semiconductor region and the fourth semiconductor region, respectively.
3. The semiconductor device according to claim 1 , further comprising:
a first isolating insulating film lying between the gate insulating film and the first electrode and having a thickness greater than a thickness of the gate insulating film.
4. The semiconductor device according to claim 3 , further comprising:
a second isolating insulating film lying between the gate insulating film and the second electrode and having a thickness greater than a thickness of the gate insulating film.
5. The semiconductor device according to claim 4 ,
wherein the thickness of the first isolating insulating film is greater than the thickness of the second isolating insulating film.
6. The semiconductor device according to claim 1 , further comprising:
a second isolating insulating film lying between the gate insulating film and the second electrode and having a thickness greater than a thickness of the gate insulating film.
7. The semiconductor device according to claim 1 ,
wherein the first electrode comprises a silicide layer formed over the second semiconductor region.
8. The semiconductor device according to claim 1 ,
wherein the first electrode is electrically connected to the second semiconductor region.