Memory system with semiconductor memory and its data transfer method

1. A data transfer method comprising:

reading data from a NAND flash memory in pages into a first buffer;

transferring a parity in the data read into the first buffer to a second buffer;

after transferring the parity to the second buffer, transferring a main data in the data read into the first buffer to the second buffer;

on the basis of the parity, correcting an error in the main data transferred to the second buffer; and

transferring an error-corrected main data to a third buffer,

wherein the main data is divided into N groups (N is a natural number not less than 3), and the N groups are transferred sequentially from the first buffer to the second buffer, and

in the period during which an i-th group (i is a natural number and meets the expression i≦N) is transferred from the first buffer to the second buffer, an error in an (i−1)th group is corrected and an error-corrected (i−2)th group is transferred to the third buffer.

2. The method according to claim 1 , wherein the second buffer includes a first data holding unit and a second data holding unit which are capable of holding data, and

in the period during which the i-th group is transferred to the first data holding unit, the second data holding unit is used to correct an error in the (i−1)th group.

3. The method according to claim 1 , wherein the NAND flash memory includes a first area capable of holding the main data and a second area capable of holding the parity, and

each of the first to third buffers includes an area corresponding to the main data in the first area and an area corresponding to the parity in the second area.

4. The method according to claim 1 , wherein a transfer of the main data from the first buffer to the second buffer, a process of correcting an error in the main data, and a transfer of the main data from the second buffer to the third buffer are performed in units obtained by dividing the main data into a plurality of groups.

5. The method according to claim 1 , wherein a bus width of a first transfer path which transfers data between the first buffer and the second buffer is equal to a bus width of a second transfer path which transfers data between the second buffer and the third buffer.

6. The method according to claim 5 , wherein the second buffer is capable of inputting and outputting the main data simultaneously.

7. The method according to claim 1 , wherein the second buffer is a buffer memory included in an ECC system which performs an error correcting process, and

the third buffer is a buffer memory included in an SRAM which functions as a buffer memory of the NAND flash memory.

8. A data transfer method comprising:

transferring main data from a first buffer to a second buffer, the main data being divided into N groups (N is a natural number not less than 3) and the N groups being transferred sequentially from the first buffer to the second buffer;

causing an error correcting circuit to generate parity for the main data transferred to the second buffer;

transferring the main data and the parity to a third buffer, not only parity being generated for an (I+1)th group but also an (i+2)th group being transferred from the first buffer to the second buffer in the period during which an i-th group (i is a natural number and meets the expression (i+2)≦N) is transferred from the second buffer to the third buffer; and

programming the main data and the parity in the NAND flash memory in pages.

9. The method according to claim 8 , wherein the second buffer includes a first data holding unit and a second data holding unit which are capable of holding data, and

in the period during which the i-th group is transferred to the first data holding unit, the second data holding unit is used to generate the parity for the (i−1)th group.

10. The method according to claim 8 , wherein a transfer of the main data from the first buffer to the second buffer, a process of generating the parity for the main data, and a transfer of the main data from the second buffer to the third buffer are performed in units obtained by dividing the main data into a plurality of groups.

11. The method according to claim 8 , wherein a bus width of a first transfer path which transfers data between the first buffer and the second buffer is equal to a bus width of a second transfer path which transfers data between the second buffer and the third buffer.

12. The method according to claim 11 , wherein the second buffer is capable of inputting and outputting the main data simultaneously.

13. The method according to claim 8 , wherein the third buffer is a buffer memory included in an SRAM which functions as a buffer memory of the NAND flash memory, and

the second buffer is a buffer memory included in an ECC system which performs the error correcting process.

14. A memory system comprising:

a NAND flash memory which is capable of holding data;

an ECC system which performs ECC processing on the data;

a buffer memory which is used to input and output the data to and from the NAND flash memory;

a controller which controls the operations of the NAND flash memory, the ECC system, and the buffer memory, a direction in which a clock is propagated between the NAND flash memory, ECC system, buffer memory, and the controller being switched depending on whether the data is loaded or programmed;

a clock generator which generates a first clock,

wherein, when the data is programmed,

the data is transferred from the buffer memory to the NAND flash memory via the ECC system,

the buffer memory generates a second clock on a basis of the first clock and transfers the second clock and the data to the ECC system in synchronization with the second clock,

the ECC system generates not only parity for the data but also a third clock on a basis of the second clock and transfers the third clock and the data to the NAND flash memory in synchronization with the third clock, and

the NAND flash memory receives the data in synchronization with the third clock.

15. The system according to claim 14 ,

wherein, when the data is loaded,

the controller generates a fourth clock on the basis of the first clock,

the NAND flash memory transfers the data to the ECC system in synchronization with the fourth clock,

the ECC system receives the data in synchronization with the second clock, detects and corrects an error in the data, generates a fifth clock on the basis of the fourth clock, and outputs the fifth clock and the data to the buffer memory in synchronization with the fifth clock, and

the buffer memory receives the data in synchronization with the fifth clock.

16. The system according to claim 15 , further comprising:

a third switch which is provided between the controller and the ECC system and between the controller and the NAND flash memory, the third switch turning on to transfer the fourth clock from the controller to the ECC system and the NAND flash memory when the data is loaded, and the third switch turning off when the data is programmed.

17. The system according to claim 14 , wherein the NAND flash memory, the ECC system, the buffer memory, and the controller are formed on a same semiconductor substrate.

18. The system according to claim 17 , wherein the buffer memory is an SRAM.

19. The system according to claim 14 , further comprising:

a first switch which is provided between the clock generator and the buffer memory, the first switch turning on to transfer the first clock from the clock generator to the buffer memory when the data is programmed, and the first switch turning off when the data is loaded, and

a second switch which is provided between the ECC system and the NAND flash memory, the second switch turning on to transfer the third clock from the ECC system to the NAND flash memory when the data is programmed, and the second switch turning off when the data is loaded.