Digital X-ray detecting panel and method for manufacturing the same
A digital X-ray detecting panel includes a wavelength transforming layer and a photoelectric detecting plate. The wavelength transforming layer is configured for transforming X-ray into visible light. The photoelectric detecting plate is disposed under the wavelength transforming layer. The photoelectric detecting plate includes a substrate and a number of photoelectric detecting units disposed on the substrate and arranged in an array. Each of the photoelectric detecting units includes a thin film transistor and a photodiode electrically connected to the thin film transistor. The thin film transistor has an oxide semiconductor layer. The digital X-ray detecting panel can avoid a photocurrent in the thin film transistor, and thereby improving detecting accuracy of the digital X-ray detecting panel. A method for manufacturing the digital X-ray detecting panel is also provided.
1. A digital X-ray detecting panel, comprising:
a wavelength transforming layer configured for transforming X-ray into visible light; and
a photoelectric detector array substrate disposed under the wavelength transforming layer, the photoelectric detector array substrate comprising a substrate and a plurality of photoelectric detecting units disposed on the substrate and arranged in an array, each of the photoelectric detecting units comprising a thin film transistor and a photodiode electrically connected to the thin film transistor, and the thin film transistor having an oxide semiconductor layer, wherein the oxide semiconductor layer prevents a photocurrent from being caused in the oxide semiconductor layer when the oxide semiconductor is illuminated by visible light, and an electric leakage generated in the thin film transistor is accordingly prevented.
2. The digital X-ray detecting panel as claimed in claim 1 , further comprising a driving integrate circuit electrically connected to the photoelectric detector array substrate.
3. The digital X-ray detecting panel as claimed in claim 1 , wherein each of the thin film transistors further comprises:
a first metal layer disposed on the substrate;
a first insulating layer disposed on the substrate and covering the first metal layer, and the oxide semiconductor layer being disposed on the first insulating layer and above the first metal layer; and
a second metal layer disposed on the first insulating layer and covering a part of the oxide semiconductor layer, and each of the thin film transistors being electrically connected to the corresponding photodiode through the second metal layer.
4. The digital X-ray detecting panel as claimed in claim 3 , wherein each of the photodiodes is an NIP type photodiode comprising:
an n-type doped amorphous silicon layer disposed on the second metal layer of the corresponding thin film transistor;
an amorphous silicon intrinsic layer disposed on the n-type doped amorphous silicon layer;
a p-type doped amorphous silicon layer disposed on the amorphous silicon intrinsic layer; and
a transparent electrode layer disposed on the p-type doped amorphous silicon layer.
5. The digital X-ray detecting panel as claimed in claim 3 , wherein each of the photodiodes is an MIS type photodiode comprising:
an insulating layer disposed on the second metal layer of the corresponding thin film transistor;
an amorphous silicon intrinsic layer disposed on the insulating layer;
an n-type doped amorphous silicon layer disposed on the amorphous silicon intrinsic layer; and
a transparent electrode layer disposed on the n-type doped amorphous silicon layer.
6. The digital X-ray detecting panel as claimed in claim 3 , wherein the photoelectric detector array substrate further comprises:
a second insulating layer covering the thin film transistors and the photodiodes, the second insulating layer having a plurality of a first openings corresponding to the photodiodes, and a part of each photodiode being exposed from the corresponding first opening; and
a protecting layer disposed on the second insulating layer, and the protecting layer having a plurality of second openings corresponding to the first openings.
7. The digital X-ray detecting panel as claimed in claim 1 , wherein the oxide semiconductor layer is made of a material of amorphous indium gallium zinc oxide.
8. The digital X-ray detecting panel as claimed in claim 1 , wherein a thickness of the oxide semiconductor layer is from 500 angstroms to 1500 angstroms.
9. The digital X-ray detecting panel as claimed in claim 1 , wherein a thickness of the oxide semiconductor layer is from 600 angstroms to 900 angstroms.