Coaxial through-silicon via
View Patent ↗A through-silicon via (TSV) structure forming a unique coaxial or triaxial interconnect within the silicon substrate. The TSV structure is provided with two or more independent electrical conductors insulated from another and from the substrate. The electrical conductors can be connected to different voltages or ground, making it possible to operate the TSV structure as a coaxial or triaxial device. Multiple layers using various insulator materials can be used as insulator, wherein the layers are selected based on dielectric properties, fill properties, interfacial adhesion, CTE match, and the like. The TSV structure overcomes defects in the outer insulation layer that may lead to leakage. A method of fabricating such a TSV structure is also described.
1. An integrated circuit (IC) coaxial through-silicon via (TSV) structure comprising:
a substrate provided with at least one TSV extending vertically down from a top surface of said substrate, said TSV having an inner conductor of tubular shape surrounding a post made of a same material as said substrate, said inner conductor separated from said post by a first dielectric; and
an outer conductor of tubular shape concentric to said inner conductor separated from said inner conductor by a second dielectric surrounding an outer surface of said inner conductor, said outer conductor insulated from said substrate by said first insulator and provides said inner conductor with an outer shield that provides significant capacitance reduction and protection from electromagnetic interference.
2. The IC coaxial TSV structure as recited in claim 1 further comprises a center post made of the same material as said substrate.
3. The IC coaxial TSV structure as recited in claim 1 , wherein said conductive lines are connected to active layers provided with interconnect wires or passive circuitry formed upon said substrate.
4. The IC coaxial TSV structure as recited in claim 1 , wherein said conductive lines respectively make electrical contact with interconnect wires, and are respectively connected to a voltage or to ground.
5. The IC coaxial TSV structure as recited in claim 2 , wherein said TSV is an annular via having an inner and an outer wall filled with insulating material deposited on exposed surfaces.
6. The IC coaxial TSV structure as recited in claim 5 wherein said insulator outer wall is a dielectric film covering sidewalls of said coaxial TSV outer circumference, and wherein said insulator inner wall is a dielectric film covering said central post of said via.
7. The IC coaxial TSV structure as recited in claim 5 , wherein said insulating material electrically insulates said substrate from said conductive lines.
8. The IC coaxial TSV structure as recited in claim 6 , wherein said insulating material is a photosensitive polyimide insulator (PSPI).
9. The IC coaxial TSV structure as recited in claim 8 , wherein said PSPI comprises at least one of polyimide, benzocyclobutene or fluorinated polyimide, polyorganohydrosilane, polyphenylenes, polysiloxanes, copolymers of divinylsiloxane and bisbenzocyclobutene, polybenzil, polyarylethers and polytetraflurorethylene, and photosensitive polymers.
10. The IC coaxial TSV structure as recited in claim 1 , wherein said center post is filled with polyimide.
11. The IC coaxial TSV structure as recited in claim 1 , wherein said coaxial TSV topside and backside surfaces are planarized, severing a connection between said conductive lines.
12. The IC coaxial TSV structure as recited in claim 1 , further comprising two of said severed conductive lines respectively connected to a voltage and to ground and coupled to said center post.
13. The IC coaxial TSV structure as recited in claim 1 , wherein three of said conductive lines respectively connected to voltages and to ground and coupled to two center posts form a triaxial TSV.