An SRAM device uses a four-terminal double gate field effect transistor as a selection transistor, wherein the four-terminal double gate field effect transistor comprises a gate which drives the transistor and a gate which controls a threshold voltage, which are electrically separated from each other, on both surfaces of a standing semiconductor thin plate, and wherein a voltage used to reduce a threshold voltage is input to the gate which controls the threshold voltage of the selection transistor during a writing operation than during a reading operation. The SRAM device which can increase both the read and write margins is provided.
1. An SRAM device using a four-terminal double gate field effect transistor as a selection transistor,
wherein the four-terminal double gate field effect transistor comprises a gate which drives the transistor and a gate which controls a threshold voltage, which are electrically separated from each other, on both surfaces of a standing semiconductor thin plate, and
wherein a voltage used to reduce a threshold voltage is input to the gate which controls the threshold voltage of the selection transistor during a writing operation than during a reading operation,
wherein the gate which controls the threshold voltage of the selection transistor is connected to wires arranged in a column direction parallel with a bit line; and
wherein the SRAM cell comprises a first half cell and a second half cell,
each half cell comprising an inverter and a selection transistor,
the inverter comprising a first transistor having a first conductivity channel and a second transistor having a second conductivity channel,
the inverter working as a component of a flip-flop together with an inverter in the counter-part half cell,
the selection transistor in the half cell comprising the four-terminal double gate field effect transistor,
a source, a drain, and a gate of the first transistor and a source, a drain, and a gate of the second transistor in the inverter being configured side-by-side, respectively,
a contact to the gate of the first transistor and a contact to the gate of the second transistor being collectively implemented by a single contact being configured between the first and the second transistors,
each four-terminal double gate field effect transistor comprising a standing semiconductor thin plate being aligned on the straight line running on the source and the drain of the first transistor in each inverter in each half cell,
the drain of the first transistor in each inverter being connected to the standing semiconductor thin plate of the four-terminal double gate field effect transistor in each half cell via a single contact,
the first gate of the four-terminal double gate field effect transistor which drives its selection operation being formed on the surface of the standing semiconductor thin plate facing outside the cell,
the second gate of the four-terminal double gate field effect transistor which adjusts its threshold voltage being formed on the surface of the standing semiconductor thin plate facing on the side where the gate contact for the input of the inverter is configured in reference to the line running on the standing semiconductor thin plane,
the wire which distributes the bias voltage which adjusts threshold voltage being implemented in parallel with a bit line,
the first half cell and the second half cell being configured to be symmetrical about a point, and
the contact to the first gate of the four-terminal double gate field effect transistor being implemented on the boundary of a neighbor memory cell.
2. The SRAM device according to claim 1 ,
wherein a potential lower than a ground potential of a cell is input to a word line when the word line is not selected.
3. The SRAM device according to claim 1 ,
wherein the SRAM cell comprises a first half cell and a second half cell,
each half cell comprising an inverter and a selection transistor,
the inverter comprising a first transistor having a first conductivity channel and a second transistor having a second conductivity channel,
the inverter working as a component of a flip-flop together with an inverter in the counter-part half cell,
the selection transistor in the half cell comprising the four-terminal double gate field effect transistor,
a source, a drain, and a gate of the first transistor and a source, a drain, and a gate of the second transistor in the inverter being configured side-by-side, respectively,
a contact to the gate of the first transistor and a contact to the gate of the second transistor being collectively implemented by a single contact being configured between the first and the second transistors,
each four-terminal double gate field effect transistor comprising a standing semiconductor thin plate being aligned on the straight line running on the source and the drain of the first transistor in each inverter in each half cell,
the drain of the first transistor in each inverter being connected to the standing semiconductor thin plate of the four-terminal double gate field effect transistor in each half cell via a single contact,
the first gate of the four-terminal double gate field effect transistor which drives its selection operation being formed on the surface of the standing semiconductor thin plate facing outside the cell,
the second gate of the four-terminal double gate field effect transistor which adjusts its threshold voltage being formed on the surface of the standing semiconductor thin plate facing on the side where the gate contact for the input of the inverter is configured in reference to the line running on the standing semiconductor thin plane,
the wire which distributes the bias voltage which adjusts threshold voltage being implemented in parallel with a bit line,
the first half cell and the second half cell being configured to be symmetrical about a point,
the contact to the first gate of the four-terminal double gate field effect transistor being implemented on the boundary of a neighbor memory cell, and
wherein a potential lower than a ground potential of a cell is input to a word line when the word line is not selected.
4. The SRAM device according to claim 1 , further comprising, on each column, a circuit which calculates the logical product of a write enable signal and a column selection signal which is output from a column decoder, and generates a bias voltage according to the result.
5. The SRAM device according to claim 1 ,
wherein a signal potential of a word line is adjusted so as to reduce a current leakage which flows through a bit line in a cell belonging to a row without being selected.
6. The SRAM device according to claim 5 , further comprising, on each row, a circuit which determines the signal potential suitable to an operation of a corresponding row on the basis of a row selection signal of a row decoder, and outputs the signal potential to a word line.
7. The SRAM device according to claim 2 , further comprising, on each column, a circuit which calculates the logical product of a write enable signal and a column selection signal which is output from a column decoder, and generates a bias voltage according to the result.
8. The SRAM device according to claim 2 ,
wherein a signal potential of a word line is adjusted so as to reduce a current leakage which flows through a bit line in a cell belonging to a row without being selected.
9. The SRAM device according to claim 8 , further comprising, on each row, a circuit which determines the signal potential suitable to an operation of a corresponding row on the basis of a row selection signal of a row decoder, and outputs the signal potential to a word line.
10. An SRAM device using a four-terminal double gate field effect transistor as a selection transistor,
wherein the four-terminal double gate field effect transistor comprises a gate which drives the transistor and a gate which controls a threshold voltage, which are electrically separated from each other, on both surfaces of a standing semiconductor thin plate, and
wherein a voltage used to reduce a threshold voltage is input to the gate which controls the threshold voltage of the selection transistor during a writing operation than during a reading operation,
wherein the gate which controls the threshold voltage of the selection transistor is connected to wires arranged in a column direction parallel with a bit line; and
wherein the SRAM cell comprises a first half cell and a second half cell,
each half cell comprising an inverter and a selection transistor,
the inverter comprising a first transistor having a first conductivity channel and a second transistor having a second conductivity channel,
the inverter working as a component of a flip-flop together with an inverter in the counter-part half cell,
the selection transistor in the half cell comprising the four-terminal double gate field effect transistor,
a source, a drain, and a gate of the first transistor and a source, a drain, and a gate of the second transistor in the inverter being configured side-by-side, respectively,
a contact to the gate of the first transistor and a contact to the gate of the second transistor being collectively implemented by a single contact being configured between the first and the second transistors,
each four-terminal double gate field effect transistor comprising a standing semiconductor thin plate being aligned on the straight line running on the source and the drain of the first transistor in each inverter in each half cell,
the drain of the first transistor in each inverter being connected to the standing semiconductor thin plate of the four-terminal double gate field effect transistor in each half cell via a single contact,
the first gate of the four-terminal double gate field effect transistor which drives its selection operation being formed on the surface of the standing semiconductor thin plate facing outside the cell,
the second gate of the four-terminal double gate field effect transistor which adjusts its threshold voltage being formed on the surface of the standing semiconductor thin plate facing on the side where the gate contact for the input of the inverter is configured in reference to the line running on the standing semiconductor thin plane,
the wire which distributes the bias voltage which adjusts threshold voltage being implemented in parallel with a bit line,
the first half cell and the second half cell being configured to be symmetrical about a point,
the contact to the first gate of the four-terminal double gate field effect transistor being implemented on the boundary of a neighbor memory cell, and
wherein a potential lower than a ground potential of a cell is input to a word line when the word line is not selected.
11. The SRAM device according to claim 10 , further comprising, on each column, a circuit which calculates the logical product of a write enable signal and a column selection signal which is output from a column decoder, and generates a bias voltage according to the result.
12. The SRAM device according to claim 10 ,
wherein a signal potential of a word line is adjusted so as to reduce a current leakage which flows through a bit line in a cell belonging to a row without being selected.
13. The SRAM device according to claim 12 , further comprising, on each row, a circuit which determines the signal potential suitable to an operation of a corresponding row on the basis of a row selection signal of a row decoder, and outputs the signal potential to a word line.