RF circuits including transistors having strained material layers
View Patent ↗Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.
1. A semiconductor structure comprising:
a first source region and a second source region in a substrate, the first source region and the second source region being electrically coupled together;
a first drain region and a second drain region in the substrate, the first drain region and the second drain region being electrically coupled together, the first drain region being disposed between the first source region and the second source region, and the second source region being disposed between the first drain region and the second drain region; and
a first channel region, a second channel region, and a third channel region, the first channel region being disposed between the first source region and the first drain region, the second channel region being disposed between the first drain region and the second source region, the third channel region being disposed between the second source region and the second drain region, each of the first channel region, the second channel region, and the third channel region comprising a strained channel layer disposed on the substrate thereby defining an interface therebetween, the strained channel layer having a distal zone away from the interface, wherein the substrate, the interface, and the strained channel layer are characterized at least in part by an impurity gradient having a value substantially equal to zero in the distal zone.
2. The semiconductor structure of claim 1 , wherein the substrate comprises compositionally graded SiGe and a relaxed SiGe layer over the compositionally graded SiGe.
3. The semiconductor structure of claim 1 , wherein the impurity gradient describes a concentration of germanium.
4. The semiconductor structure of claim 1 , wherein the impurity gradient describes a concentration of silicon.
5. The semiconductor structure of claim 1 further comprising:
a first gate dielectric over the first channel region and a first gate electrode over the first gate dielectric;
a second gate dielectric over the second channel region and a second gate electrode over the second gate dielectric; and
a third gate dielectric over the third channel region and a third gate electrode over the third gate dielectric.
6. The semiconductor structure of claim 1 further comprising a relaxed cap layer over each of the strained channel layer of the first channel region, the second channel region, and the third channel region.
7. The semiconductor structure of claim 1 , wherein the substrate comprises a planarized surface at the interface.
8. The semiconductor structure of claim 1 , wherein the distal zone includes at least 50 Angstroms of the strained channel layer.
9. A semiconductor structure comprising:
at least four interdigitated source/drain regions in a substrate, alternating ones of the at least four interdigitated source/drain regions being electrically coupled together; and
at least three channel regions in the substrate, each of the at least three channel regions being defined by adjacent ones of the at least four interdigitated source/drain regions, each of the at least three channel regions comprising a strained channel layer disposed on the substrate thereby defining an interface therebetween, the strained channel layer having a distal zone away from the interface, wherein the substrate, the interface, and the strained channel layer are characterized at least in part by an impurity gradient having a value substantially equal to zero in the distal zone.
10. The semiconductor structure of claim 9 , wherein the substrate comprises compositionally graded SiGe and a relaxed SiGe layer over the compositionally graded SiGe.
11. The semiconductor structure of claim 9 , wherein the impurity gradient describes a concentration of germanium.
12. The semiconductor structure of claim 9 , wherein the impurity gradient describes a concentration of silicon.
13. The semiconductor structure of claim 9 , wherein the impurity gradient describes a concentration of a p-type dopant and/or an n-type dopant.
14. The semiconductor structure of claim 9 further comprising a relaxed cap layer over each of the strained channel layer of the at least three channel regions.
15. The semiconductor structure of claim 9 , wherein the substrate comprises a planarized surface at the interface.
16. A semiconductor structure comprising:
at least four source/drain regions formed in parallel in a substrate, alternating ones of the at least four source/drain regions being electrically coupled; and
channel regions formed in the substrate, each channel region being disposed between adjacent source/drain regions, each channel region comprising a strained channel layer disposed on the substrate thereby defining an interface therebetween, the strained channel layer having a distal zone away from the interface wherein the substrate, the interface, and the strained channel layer are characterized at least in part by an impurity gradient having a value substantially equal to zero in the distal zone.
17. The semiconductor structure of claim 16 , wherein the substrate comprises compositionally graded SiGe and a relaxed SiGe layer over the compositionally graded SiGe.
18. The semiconductor structure of claim 16 , wherein the impurity gradient describes a concentration of germanium.
19. The semiconductor structure of claim 16 , wherein the impurity gradient describes a concentration of silicon.
20. The semiconductor structure of claim 16 further comprising a relaxed cap layer over each of the strained channel layer of the channel regions.