Glass compositions used in conductors for photovoltaic cells

1. A composition comprising:

(a) one or more conductive materials;

(b) one or more glass frits, wherein at least one of the glass frits comprises: SiO 2 ; B 2 O 3 ; Bi 2 O 3 ; CeO 2 0.1-3 wt %; F 1-10 wt %; and Na+Li+K 1-3 wt %,

wherein the wt % of F, Na, Li, and K are the calculated elemental weight percent of the raw materials; and

(c) organic medium,

wherein the composition is free of a zinc-containing additive.

2. The composition of claim 1 , wherein at least one of the glass frits further comprises one or more components selected from the group consisting of: Ca, CaO, Mg, MgO, Sr, SrO, Ba, and BaO.

3. The composition of claim 1 , wherein the CeO 2 is at 0.75-2.5 wt %.

4. The composition of claim 1 , wherein at least one of the glass frits further comprises one or more components selected from the group consisting of: ZnO, TiO 2 , Ta 2 O 5 , Nb 2 O 5 , and ZrO 2 .

5. The composition of claim 1 , wherein the conductive material comprises Ag.

6. The composition of claim 1 , wherein the glass frits are 4-8 wt % of the total composition.

7. The composition of claim 1 , s Therein the conductive materials are 75-85 wt % of the total composition.

8. The composition of claim 1 , wherein the Na is selected from:

NaO, Na 2 F, and mixtures thereof; wherein the Li is selected from: Li 2 O, LiF, and mixtures thereof; and wherein the K is selected from: K 2 O, KF, and mixtures thereof.

9. A method of manufacturing a semiconductor device comprising the steps of:

(a) providing a semiconductor substrate, one or more insulating films, and the composition of claim 1 ;

(b) applying the insulating film to the semiconductor substrate,

(c) applying the thick film composition of claim 1 to the insulating film on the semiconductor substrate, and

(d) firing the semiconductor, insulating film and thick film composition.

10. The method of claim 9 , wherein the insulating film comprises one or more components selected from: titanium oxide, silicon nitride, SiNx:H, silicon oxide, and silicon oxide/titanium oxide.

11. A semiconductor device made by the method of claim 9 .

12. A semiconductor device comprising an electrode, wherein the electrode, prior to firing, comprises the composition of claim 1 .

13. A solar cell comprising the semiconductor device of claim 12 .

14. A composition comprising:

(a) one or more conductive materials;

(b) one or more glass frits, wherein at least one of the glass frits comprises:

SiO 2 2.5-8 wt %;

B 2 O 3 3-10 wt %;

Bi 2 O 3 25-80 wt %;

CeO 2 0.1-3 wt %;

F 1-10 wt %; and

Na+Li+K 1-3 wt %,

wherein the wt % of F, Na, Li, and K are the calculated elemental weight percent of the raw materials; and

(c) organic medium wherein said composition is free of a zinc-containing additive.