Method of fabricating flash memory device
A semiconductor device includes a semiconductor substrate having a cell region and a peripheral region. A cell array is defined within the cell region, the cell array having first, second, third, and fourth sides. A first decoder is defined within the peripheral region and provided adjacent to the first side of the cell array. A first isolation structure is formed at a first boundary region provided between the first side of the cell array and the peripheral region. A first active region is formed at a second boundary region that is provided between the second side of the cell array and the peripheral region. The first isolation structure has a first portion that has a first depth and a second portion that has a second depth.
1. A method for forming a semiconductor device, the method comprising:
providing a semiconductor substrate having a cell region, a peripheral region, and a boundary region including a gate line region, wherein the boundary region is disposed between the cell region and the peripheral region;
forming a first isolation structure disposed in the peripheral region, a second isolation structure disposed in the cell region, and a field oxide structure disposed in the gate line region of the boundary region, thereby forming an active region in a portion of the boundary region except the gate line region of the boundary region; and
forming a gate line over the field oxide structure so that the gate line is not formed over the active region.
2. The method of claim 1 , further comprising:
forming a well pickup region within the active region after the first and second isolation structures and field oxide structure have been formed.
3. The method of claim 2 , wherein the well pickup region is formed using the same impurity as that of a well region formed within the cell region.
4. The method of claim 3 , wherein the well pickup region has a higher impurity concentration than that of the well region in the cell region.
5. The method of claim 3 , wherein an impurity concentration of the well pickup region is 5E14 to 5E15 ions/cm 2 .
6. The method of claim 1 , wherein the forming the first and second isolation structures and field oxide structure step comprises:
etching the semiconductor substrate of the peripheral region to form a first trench of the first isolation structure, the first trench having a first depth; and
etching the semiconductor substrate of the cell region to form a second trench of the second isolation structure, the second trench having a second depth.
7. The method of claim 1 , wherein the cell region includes first, second, third, and fourth sides,
wherein the gate line region is adjacent to the first side of the cell region,
wherein the field oxide structure is formed in the boundary region between the first side of the cell region and the peripheral region, and
wherein the active region is formed in the boundary region between the second, third, and fourth sides of the cell region and the peripheral region.
8. The method of claim 1 , wherein the cell region includes first, second, third, and fourth sides,
wherein the gate line region is adjacent to the first and second sides of the cell region,
wherein the field oxide structure is formed in the boundary region between the first and second sides of the cell region and the peripheral region, and
wherein the active region is formed in the boundary region between the third and fourth sides of the cell region and the peripheral region.