Sheet structure, semiconductor device and method of growing carbon structure
The sheet structure includes a plurality of linear structure bundles including a plurality of linear structures of carbon atoms arranged at a first gap, and arranged at a second gap larger than the first gap, a graphite layer formed in a region between the plurality of linear structure bundles and connected to the plurality of linear structure bundles, and a filling layer filled in the first gap and the second gap and retaining the plurality of linear structure bundles and the graphite layer.
1. A method of growing a carbon structure comprising:
forming a first catalytic metal film over a substrate in a first region;
forming a second catalytic metal film different from the first catalytic metal film over the substrate in a second region adjacent to the first region;
forming selectively in the first region a first carbon structure including a plurality of linear structures of carbon atoms with the first catalytic metal film as a catalyst; and
forming selectively in the second region a second carbon structure including a graphite layer with the second catalytic metal film as a catalyst.
2. The method of growing a carbon structure growing method according to claim 1 , wherein
forming the first carbon structure and forming the second carbon structure are made simultaneously.
3. The method of growing a carbon structure according to claim 2 , wherein
in forming the first catalytic metal film, the first catalytic metal film including a 0.3-10 nm-thickness Fe film is formed, and
in forming the second catalytic metal film, the second catalytic metal film including a 10-1000 nm-thickness Fe film is formed.
4. The method of growing a carbon structure according to claim 1 , wherein
forming the second catalytic metal film is made after forming the first carbon structure and before forming the second carbon structure.
5. The method of growing a carbon structure according to claim 4 , wherein
in forming the second carbon structure, the second carbon structure including the graphite layer formed on an upper surface of a plurality of linear structure layer of carbon atoms is formed.
6. The method of growing a carbon structure according to claim 5 , wherein
after forming the first carbon structure, forming the second catalytic metal film and forming the second carbon structure are repeated to form a layer structure of the second carbon structures in the second region.
7. The method of growing a carbon structure according to claim 4 , wherein
in forming the first catalytic metal film, the first catalytic metal film of a 0.3-10 nm-thickness Fe film is formed, and
in forming the second catalytic metal film, the second catalytic metal film of a 2.0-7.0 nm-thickness Co film is formed.
8. The method of growing a carbon structure according to claim 4 , wherein
in forming the second carbon structure, the second carbon structure is formed at 350-560° C.
9. A method of manufacturing a sheet structure comprising:
forming over the substrate the first carbon structure and the second carbon structure by the method of growing the carbon structure according to claim 1 ;
filling a filling material in the first carbon structure and the second carbon structure to form a filling layer of the filling material.
10. A method of manufacturing a semiconductor device comprising:
forming over the substrate in the first region a first carbon structure including a plurality of linear structures of carbon atoms and a first graphite layer formed on the linear structures with the first catalytic metal film as the catalyst, and simultaneously forming over the substrate in the second region a second carbon structure including a second graphite layer with the second catalytic metal film as a catalyst by the method of growing the carbon structure according to claim 9 , wherein
a via interconnection formed of the plurality of linear structures, and an interconnection layer including the first graphite layer and the second graphite layer are formed.
11. The method of manufacturing a semiconductor device according to claim 10 , wherein
in forming the first carbon structure and the second carbon structure, the first carbon structure and the second carbon structure are formed discriminate from each other by utilizing a difference between a growth rate of the linear structure of carbon atoms on the first catalytic metal film and a growth rate of the linear structure of carbon atoms on the second catalytic metal film.
12. The method of manufacturing a semiconductor device according to claim 10 , wherein
in forming the first catalytic metal film, the first catalytic metal film including a first Co film of a 2.0-7.0 nm-thickness is formed, and
in forming a second catalytic metal film, the second catalytic metal film including a second Co film of a 2.0-7.0 nm-thickness and thicker than the first Co film is formed.